APTM50AM35FTG Microsemi Power Products Group, APTM50AM35FTG Datasheet - Page 6

• Manufacturer Part Number: APTM50AM35FTG
• Description: MOSFET MOD PHASE LEG 500V SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50AM35FTG

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 99A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 14000pF @ 25V
• Power - Max: 781W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6
5
4
3
2
1
0
450
400
350
300
250
200
150
100
80
70
60
50
40
30
20
10
50
0
0
0
10
Operating Frequency vs Drain Current
V
R
T
L=100µH
J
DS
G
V
R
T
L=100µH
=125°C
20
=1Ω
=333V
J
DS
G
20
=125°C
=1Ω
20
Switching Energy vs Current
=333V
switching
40
I
Delay Times vs Current
D
Hard
40
I
, Drain Current (A)
30
I
D
D
, Drain Current (A)
, Drain Current (A)
60
60
40
80 100 120 140 160
80 100 120 140 160
50
ZCS
ZVS
60
E
V
D=50%
R
T
T
70
on
J
C
DS
G
td(off)
E
=125°C
=75°C
td(on)
=1Ω
=333V
off
80
90
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1000
160
140
120
100
100
80
60
40
20
10
APTM50AM35FTG
0
10
1
Source to Drain Diode Forward Voltage
8
6
4
2
0
0.2 0.4 0.6 0.8
0
Switching Energy vs Gate Resistance
0
V
R
T
L=100µH
DS
J
V
I
T
L=100µH
G
D
=125°C
V
20
=1Ω
J
DS
Rise and Fall times vs Current
=99A
=333V
=125°C
SD
=333V
, Source to Drain Voltage (V)
T
Gate Resistance (Ohms)
5
J
40
=150°C
I
D
E
, Drain Current (A)
off
60
10
T
J
=25°C
80 100 120 140 160
1
15
1.2 1.4 1.6 1.8
E
off
E
t
20
t
on
f
r
25
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