APTM20DUM04G Microsemi Power Products Group, APTM20DUM04G Datasheet

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APTM20DUM04G

Manufacturer Part Number
APTM20DUM04G
Description
MOSFET MOD DUAL COM SRC 200V SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM20DUM04G

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 186A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
372A
Vgs(th) (max) @ Id
5V @ 10mA
Gate Charge (qg) @ Vgs
560nC @ 10V
Input Capacitance (ciss) @ Vds
28900pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
G1
S1
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
G1
S1
S2
G2
Dual common source
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
D1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q1
D1
S
D2
S
Parameter
Q2
D2
G2
S2
www.microsemi.com
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
= 372A @ Tc = 25°C
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
-
-
-
-
-
-
-
= 200V
= 4mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
M5 power connectors
APTM20DUM04G
Max ratings
DSon
1488
1250
3000
200
372
278
±30
100
50
5
®
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 7

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APTM20DUM04G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM20DUM04G V = 200V DSS R = 4mΩ typ @ Tj = 25°C DSon I = 372A @ Tc = 25°C D Application • ...

Page 2

... Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 372A di/dt ≤ 700A/µ APTM20DUM04G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 200V 0V,V ...

Page 3

... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM20DUM04G Min 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com Typ ...

Page 4

... V , Drain to Source Voltage ( Drain Current DS(on) 1.2 Normalized to V =10V @ 186A GS 1.1 1 0.9 0.8 0 100 200 300 I , Drain Current (A) D APTM20DUM04G Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 1200 1000 800 9V 8.5V 600 8V 400 7.5V 7V 200 6. Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 1000 Crss 100 Drain to Source Voltage (V) DS APTM20DUM04G ON resistance vs Temperature 2.5 V =10V 186A 2.0 D 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 10000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM20DUM04G 160 V ...

Page 7

... APTM20DUM04G www.microsemi.com 7 – 7 ...

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