IXFN44N50 IXYS, IXFN44N50 Datasheet - Page 2

MOSFET N-CH 500V 44A SOT-227B

IXFN44N50

Manufacturer Part Number
IXFN44N50
Description
MOSFET N-CH 500V 44A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN44N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
8400pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.12 Ohms
Forward Transconductance Gfs (max / Min)
42 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
44 A
Power Dissipation
520 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.12
Ciss, Typ, (pf)
8400
Qg, Typ, (nc)
270
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
520
Rthjc, Max, (ºc/w)
0.24
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN44N50
Manufacturer:
IXYS
Quantity:
27
Part Number:
IXFN44N50
Manufacturer:
ST
Quantity:
300
Part Number:
IXFN44N50U2
Manufacturer:
IXYS
Quantity:
492
© 2000 IXYS All rights reserved
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
RM
d(on)
d(off)
f
S
SM
r
rr
fs
SD
oss
thJC
thCK
thJC
thCK
iss
rss
g(on)
gs
gd
RM
Test Conditions
V
TO-264 AA
TO-264 AA
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t 300 s, duty cycle d 2 %
F
DS
GS
= 100 A, V
I
F
= 0 V
= 10 V; I
V
V
R
V
= I
GS
GS
G
GS
= 1
S
, -di/dt = 100 A/ s, V
= 0 V, V
= 10 V, V
= 10 V, V
GS
D
(External),
= 0.5 • I
= 0 V,
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, pulse test
R
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
DSS
DSS
= 100 V
(T
(T
, I
, I
J
J
JM
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
D
D
= 0.5 • I
= 0.5 • I
4,881,106
4,931,844
D25
D25
min.
min.
22
Characteristic Values
Characteristic Values
5,017,508
5,034,796
8400
TBD
typ.
typ.
0.15
0.05
900
280
100
270
135
20
42
30
60
30
60
0.25
0.24
max.
max.
192
250 ns
5,049,961
5,063,307
1.5
48
K/W
K/W
K/W
K/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
C
5,187,117
5,237,481
TO-264 AA Outline
miniBLOC, SOT-227 B
5,486,715
5,381,025
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
M4 screws (4x) supplied
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
IXFN / IXFK 44N50
IXFN / IXFK 48N50
25.91
19.81
20.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
31.50
14.91
30.12
38.00
11.68
12.60
25.15
26.54
24.59
-0.05
5.46 BSC
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
Millimeter
Min.
Millimeter
26.16
19.96
20.83
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
31.88
15.11
30.30
38.23
12.22
12.85
25.42
26.90
25.07
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
0.1 -0.002
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.000
.000
.090
.125
.239
.330
.150
.070
.238
.062
.780
.800
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
Min.
.215 BSC
Inches
Inches
1.030
Max.
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Max.
C1 - 185

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