STE45NK80ZD STMicroelectronics, STE45NK80ZD Datasheet - Page 4

MOSFET N-CH 800V 45A ISOTOP

STE45NK80ZD

Manufacturer Part Number
STE45NK80ZD
Description
MOSFET N-CH 800V 45A ISOTOP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STE45NK80ZD

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 22.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
4.5V @ 150µA
Gate Charge (qg) @ Vgs
781nC @ 10V
Input Capacitance (ciss) @ Vds
26000pF @ 25V
Power - Max
600W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5387-5
STE45NK80ZD

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STE45NK80ZD
Manufacturer:
astec
Quantity:
1 000
Part Number:
STE45NK80ZD
Quantity:
211
Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when V
C
V
Symbol
Symbol
CASE
R
V
oss eq.
(BR)DSS
g
increases from 0 to 80% V
t
t
I
I
C
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
rss
iss
gd
r
gs
f
g
(1)
=25°C unless otherwise specified)
(2)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
.
= 0)
I
V
V
T
V
V
V
V
V
V
V
720V
V
R
(see
V
V
D
C
DS
DS
GS
DS
GS
DS
DS
GS
GS
DD
DD
GS
G
= 1 mA, V
= 125 °C
= 4.7Ω ,V
= Max Rating
= Max Rating,
= ± 20V
= V
= 10V, I
= 15V
= 25V, f = 1 MHz,
= 0
= 0V, V
= 400 V, I
= 400 V, I
= 10V
Figure
Test conditions
Test conditions
GS
,
, I
I
DS
18)
D
D
GS
D
GS
= 22.5 A
= 22.5 A
D
D
= 150µA
= 0V to
= 0
= 20 A
= 10 V
= 40 A,
Min.
Min.
800
2.5
26000
1620
Typ.
3.75
0.11
Typ.
260
700
105
128
350
174
558
121
307
35
STE45NK80ZD
Max.
Max.
0.13
100
±10
781
4.5
10
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
V
V
S

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