IXFN120N20 IXYS, IXFN120N20 Datasheet - Page 3

• Manufacturer Part Number: IXFN120N20
• Description: MOSFET N-CH 200V 120A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN120N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: 9100pF @ 25V
• Power - Max: 600W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.017 Ohms
• Forward Transconductance Gfs (max / Min): 77 s
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 120
• Rds(on), Max, Tj=25°c, (?): 0.017
• Ciss, Typ, (pf): 9100
• Qg, Typ, (nc): 360
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 568
• Rthjc, Max, (ºc/w): 0.22
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1 20
1 00
2.2
0.7
1 20
1 00
80
60
40
20
1 .9
1 .6
1 .3
80
60
40
20
0
0
1
0
0
0
V
V
Fig. 5. R
GS
GS
0.5
Fig. 3. Output Characteristics
Fig. 1. Output Characteristics
30
= 1 0V
= 1 0V
V
9V
8V
7V
GS
1
= 1 0V
9V
8V
7V
DS(on)
60
1
@ 125 Deg. C
I
D
@ 25 Deg. C
Value vs. I
V
V
- Amperes
2
DS
DS
Norm alized to I
T
T
1 .5
- Volts
J
J
90
- Volts
= 1 25ºC
= 25ºC
3
D
1 20
2
6V
5V
5V
6V
4
2.5
1 50
D25
1 80
3
5
1 80
1 50
1 20
2.5
2.2
0.7
0.4
1 40
1 20
1 00
90
60
30
1 .9
1 .6
1 .3
80
60
40
20
0
0
1
Fig. 4. R
-50
-50
Fig. 2. Extended Output Characteristics
0
V
-25
V
-25
GS
Fig. 6. Drain Current vs. Case
GS
= 1 0V
= 1 0V
DS(on)
T
T
1
Junction Temperature
J
C
9V
8V
0
0
- Degrees Centigrade
- Degrees Centigrade
Norm alized to I
I
@ 25 deg. C
D
Tem perature
= 1 20A
25
25
V
2
DS
- Volts
50
50
IXFN 120N20
3
75
75
I
D
5V
7V
6V
= 60A
D25
1 00
1 00
Value vs.
4
1 25
1 25
1 50
1 50
5