APT30M36JFLL Microsemi Power Products Group, APT30M36JFLL Datasheet

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APT30M36JFLL

Manufacturer Part Number
APT30M36JFLL
Description
MOSFET N-CH 300V 76A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT30M36JFLL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
76A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
115nC @ 10V
Input Capacitance (ciss) @ Vds
6480pF @ 25V
Power - Max
463W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
BV
V
V
V
J
I
V
DS(on)
I
E
E
GS(th)
,T
I
DSS
GSS
P
I
GSM
DSS
DM
T
AR
I
D
GS
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
DS
C
FAST RECOVERY BODY DIODE
APT Website - http://www.advancedpower.com
= V
= 25°C
1
C
= 25°C
4
GS
GS
2
DS
, I
DS
®
= ±30V, V
GS
D
by significantly lowering R
= 240V, V
(V
= 300V, V
R
= 2.5mA)
= 0V, I
GS
FREDFET
= 10V, I
D
DS
= 250µA)
GS
GS
= 0V)
= 0V, T
= 0V)
D
= 38A)
All Ratings: T
C
= 125°C)
DS(ON)
300V
C
= 25°C unless otherwise specified.
MIN
300
3
APT30M36JFLL
-55 to 150
ISOTOP
2500
76A 0.036
3.70
TYP
±30
±40
300
304
463
300
76
76
50
®
0.036
1000
±100
MAX
250
5
"UL Recognized"
G
Ohms
Amps
Amps
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
Ω Ω Ω Ω Ω
D
S

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APT30M36JFLL Summary of contents

Page 1

... ±30V 0V 2.5mA APT Website - http://www.advancedpower.com 300V 76A 0.036 DS(ON) "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT30M36JFLL UNIT 300 Volts 76 Amps 304 ±30 Volts ±40 463 Watts 3.70 W/°C -55 to 150 300 Amps 76 50 2500 MIN TYP MAX UNIT ...

Page 2

... Starting T = +25° 0.87mH numbers reflect the limitations of the test circuit rather than the dt device itself. 6 Eon includes diode reverse recovery. See figures 18, 20. SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT30M36JFLL MIN TYP MAX 6480 1540 75 115 660 = 15V GS 690 = 5Ω ...

Page 3

RC MODEL Junction temp. (°C) 0.0260 Power 0.0585 (watts) 0.185 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 250 V DS > (ON (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 200 150 ...

Page 4

... 100µH 100 140 40 60 FIGURE 15, RISE AND FALL TIMES vs CURRENT 3000 2500 2000 1500 1000 500 0 140 GATE RESISTANCE (Ohms) G FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT30M36JFLL C iss C oss C rss =+25°C 0.7 0.9 1.1 1.3 1 100 120 140 I ( off E ...

Page 5

... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT30M36JFLL 90% Gate Voltage t f Drain Voltage 90% 10% 0 Drain Current 11.8 (.463) 12.2 (.480) 8.9 (.350) 9 ...

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