APT29F80J Microsemi Power Products Group, APT29F80J Datasheet
APT29F80J
Manufacturer Part Number
APT29F80J
Description
MOSFET N-CH 800V 29A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT29F80J.pdf
(4 pages)
Specifications of APT29F80J
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
460 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
29A
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
8500pF @ 25V
Power - Max
1040W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT29F80J
Manufacturer:
NIEC
Quantity:
1 000
Part Number:
APT29F80J
Quantity:
132
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
V
Symbol
Symbol
T
Torque
POWER MOS 8
MOSFET. This 'FREDFET' version has a drain-source (body) diode that has
been optimized for high reliability in ZVS phase shifted bridge and other circuits
through reduced t
charge, high gain, and a greatly reduced ratio of C
niose immunity and low switching loss. The intrinsic gate resistance and ca-
pacitance of the poly-silicon gate structure help control di/dt during switching,
resulting in low EMI and reliable paralleling, even when switching at very high
frequency.
FEATURES
Isolation
R
J
R
V
E
I
,T
W
I
• Fast switching with low EMI
• Low t rr for high reliability
• Ultra low C rss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
P
DM
I
AR
θ CS
θ JC
GS
AS
D
D
STG
T
Parameter
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage
Package Weight
Terminals and Mounting Screws.
®
is a high speed, high voltage N-channel switch-mode power
rr
, soft recovery, and high recovery dv/dt capability. Low gate
(50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.)
N-Channel FREDFET
1
C
= 25°C
Microsemi Website - http://www.microsemi.com
C
C
2
= 25°C
= 100°C
rss
/C
iss
result in excellent
TYPICAL APPLICATIONS
• ZVS phase shifted and other full full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
800V, 29A, 0.21Ω Max, t rr ≤370ns
Single die FREDFET
2500
Min
-55
ISOTOP
Ratings
APT29F80J
Typ
0.15
1.03
29.2
1979
173
±30
31
19
24
APT29F80J
®
Max
0.23
543
150
1.1
10
"UL Recognized"
file # E145592
G
°C/W
in·lbf
Unit
N·m
Unit
mJ
°C
oz
W
A
V
A
V
g
D
S
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APT29F80J Summary of contents
Page 1
... Buck converter • Single and two switch forward • Flyback = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT29F80J 800V, 29A, 0.21Ω Max ≤370ns "UL Recognized" file # E145592 ® ISOTOP D APT29F80J G Single die FREDFET S Ratings Unit 173 V ±30 1979 Min Typ ...
Page 2
Symbol Parameter V Drain-Source Breakdown Voltage BR(DSS) ∆V /∆T Breakdown Voltage Temperature Coeffi cient BR(DSS Drain-Source On Resistance DS(on) V Gate-Source Threshold Voltage GS(th) ∆V /∆T Threshold Voltage Temperature Coeffi cient GS(th Zero Gate Voltage Drain ...
Page 3
... J 100 25° 125° GATE-TO-SOURCE VOLTAGE (V) GS FIGURE 4, Transfer Characteristics 10,000 C 1,000 C 100 200 400 600 V , DRAIN-TO-SOURCE VOLTAGE (V) DS FIGURE 6, CAPACITANCE VS DRAIN-TO-SOURCE VOLTAGE 200 160 120 25° 150° 0.4 0.8 1 SOURCE-TO-DRAIN VOLTAGE (V) SD APT29F80J 4. iss oss rss 80 1.6 ...
Page 4
... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT29F80J I DM 13μs 100μs 1ms R ds(on) 10ms = T 150°C J 100ms = T 25°C ...