APT6010JLL Microsemi Power Products Group, APT6010JLL Datasheet
APT6010JLL
Manufacturer Part Number
APT6010JLL
Description
MOSFET N-CH 600V 47A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT6010JLL.pdf
(5 pages)
Specifications of APT6010JLL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 23.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
47A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
6710pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT6010JLL
Manufacturer:
APT
Quantity:
15 500
STATIC ELECTRICAL CHARACTERISTICS
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with MIcrosemi's
patented metal gate structure.
Symbol
Symbol
T
R
V
BV
V
V
J
V
I
I
E
E
DS(on)
GS(th)
,T
I
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
D
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
Microsemi Website - http://www.microsemi.com
DS
C
= V
C
= 25°C
1
= 25°C
4
GS
GS
2
DS
DS
, I
®
= ±30V, V
GS
D
(V
= 480V, V
= 600V, V
by significantly lowering R
= 2.5mA)
R
= 0V, I
GS
MOSFET
= 10V, I
D
DS
= 250µA)
GS
GS
= 0V)
= 0V, T
= 0V)
D
= 23.5A)
All Ratings: T
C
= 125°C)
DS(ON)
C
600V 47A 0.100
= 25°C unless otherwise specified.
MIN
600
3
APT6010JLL
ISOTOP
-55 to 150
3000
4.16
TYP
600
188
±30
±40
520
300
47
47
50
fi
0.100
±100
MAX
100
500
"UL Recongnized"
file # 145592
5
G
Ohms
Amps
Watts
Amps
UNIT
Volts
Volts
W/°C
UNIT
Volts
Volts
mJ
µA
nA
°C
Ω Ω Ω Ω Ω
D
S
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APT6010JLL Summary of contents
Page 1
... C = ±30V 0V 2.5mA Microsemi Website - http://www.microsemi.com 600V 47A 0.100 "UL Recongnized" DS(ON) file # 145592 ISOTOP fi 25°C unless otherwise specified. C APT6010JLL UNIT 600 Volts 47 Amps 188 ±30 Volts ±40 520 Watts 4.16 W/°C -55 to 150 300 Amps 47 50 3000 MIN TYP ...
Page 2
... MIN TYP MAX 0.24 2500 = +25° 2.72mH 25Ω, Peak ≤ ≤ 700A/µs ≤ 600V 47A Note Duty Factor Peak θ 1.0 APT6010JLL UNIT µ J UNIT Amps Volts ns µC V/ns 8 UNIT °C/W Volts = 47A ° ≤ 150 ...
Page 3
0.0528 0.0651 Dissipated Power (Watts) 0.0203 0.173 Z are the external thermal EXT impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 2, TRANSIENT THERMAL IMPEDANCE ...
Page 4
OPERATION HERE LIMITED (ON) 100 =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 47A D V ...
Page 5
... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 APT6010JLL 90% Gate Voltage t d(off) Drain Voltage 90 10% 0 Drain Current 11 ...