APT10045JLL Microsemi Power Products Group, APT10045JLL Datasheet - Page 3

• Manufacturer Part Number: APT10045JLL
• Description: MOSFET N-CH 1000V 21A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT10045JLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 154nC @ 10V
• Input Capacitance (ciss) @ Vds: 4350pF @ 25V
• Power - Max: 460W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature
Typical Performance Curves
Junction
temp. ( ”C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
(Watts)
Power
2.5
2.0
1.5
1.0
0.5
0.0
80
70
60
50
40
30
20
10
25
20
15
10
0
5
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
V
FIGURE 4, TRANSFER CHARACTERISTICS
V DS > I D (ON) x R DS (ON)MAX.
GS
V
I
-25
@ <0.5 % DUTY CYCLE
, GATE-TO-SOURCE VOLTAGE (VOLTS)
250µSEC. PULSE TEST
D
T
GS
= 11.5A
J
T J = +125°C
T
, JUNCTION TEMPERATURE (°C)
50
T J = +25°C
= 10V
2
C
, CASE TEMPERATURE (°C)
0
RC MODEL
25
75
0.0409
0.225
0.00361
4
50
100
6
75
T J = -55°C
100 125 150
125
8
0.0246F
0.406F
148F
150
10
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
60
50
40
30
20
10
0
-50
-50
0
0
V
DS
FIGURE 5, R
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
-25
-25
GS
T
NORMALIZED TO
I
J
D
5
, JUNCTION TEMPERATURE (°C)
T
10
= 10V @ 11.5A
, DRAIN CURRENT (AMPERES)
C
V GS =15 & 8V
, CASE TEMPERATURE (°C)
0
0
V GS =10V
10
DS
25
25
20
(ON) vs DRAIN CURRENT
15
50
50
V GS =20V
5V
6.5V
5.5V
6V
30
75
75
20
100 125 150
100 125 150
40
25
7V
APT10045JLL
30
50