APT50N60JCU2 Microsemi Power Products Group, APT50N60JCU2 Datasheet

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... Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant www.microsemi.com APT50N60JCU2 DSon ® Package (SOT-227) Max ratings Unit 600 V = 25° 80° 130 ± mΩ ...

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... Turn-on Switching Energy on E Turn-off Switching Energy off E Turn-on Switching Energy on E Turn-off Switching Energy off V Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr APT50N60JCU2 = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 600V 125° 0V,V = 600V ...

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... Machine and terminals = 4mm Machine) Wt Package Weight ® SOT-227 (ISOTOP ) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322 4.0 (.157) (2 places) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) APT50N60JCU2 Test Conditions I = 30A 60A 30A T = 125° 25° ...

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... Drain to Source Voltage ( (on) vs Drain Current DS 1.3 Normalized to 1.25 V =10V @ 50A GS 1.2 1.15 1.1 1.05 1 0.95 0 Drain Current (A) D APT50N60JCU2 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 140 V DS 120 6.5V 250µs pulse test @ < 0.5 duty cycle 6V 100 ...

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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Coss Ciss 10000 1000 Crss 100 Drain to Source Voltage (V) DS www.microsemi.com APT50N60JCU2 ON resistance vs Temperature 3.0 V =10V GS 2 50A D 2.0 1.5 1.0 0.5 0.0 150 Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

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... Switching Energy vs Gate Resistance 2 1.5 E off 1 0 Source to Drain Diode Forward Voltage 1000 V =400V DS D=50% R =5Ω G 100 T =125° =75° 0.3 www.microsemi.com APT50N60JCU2 Rise and Fall times vs Current =400V Drain Current ( =400V =50A off D T =125°C J L=100µ Gate Resistance (Ohms) T =150° ...