APT12080JVFR Microsemi Power Products Group, APT12080JVFR Datasheet

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APT12080JVFR

Manufacturer Part Number
APT12080JVFR
Description
MOSFET N-CH 1200V 15A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet

Specifications of APT12080JVFR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
800 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
485nC @ 10V
Input Capacitance (ciss) @ Vds
7800pF @ 25V
Power - Max
450W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT12080JVFR
Manufacturer:
APT
Quantity:
15 500
STATIC ELECTRICAL CHARACTERISTICS
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
Symbol
Symbol
T
R
V
BV
V
V
J
I
V
I
E
E
DS(on)
GS(th)
I
,T
GSS
I
DSS
GSM
P
DM
T
DSS
AR
I
GS
AR
D
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
1
(Repetitive and Non-Repetitive)
DS
C
APT Website - http://www.advancedpower.com
= V
C
= 25°C
1
• Avalanche Energy Rated
• Popular SOT-227 Package
= 25°C
4
GS
GS
2
DS
DS
, I
= ±30V, V
GS
D
(V
= 960V, V
= 1200, V
= 2.5mA)
= 0V, I
GS
= 10V, I
D
DS
GS
= 250µA)
GS
®
= 0V)
= 0V)
= 0V, T
D
= 7.5A)
All Ratings: T
C
= 125°C)
1200V
C
®
= 25°C unless otherwise specified.
1200
MIN
2
APT12080JVFR
-55 to 150
ISOTOP
15A 0.800Ω Ω Ω Ω Ω
1200
2500
3.60
TYP
±30
±40
450
300
15
60
15
50
®
0.800
±100
MAX
1000
250
"UL Recognized"
4
G
FREDFET
Amps
Amps
Ohms
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
°C
µA
nA
D
S

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APT12080JVFR Summary of contents

Page 1

... 2.5mA APT Website - http://www.advancedpower.com 15A 0.800Ω Ω Ω Ω Ω 1200V ® "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT12080JVFR 1200 15 60 ±30 ±40 450 3.60 -55 to 150 300 15 50 2500 MIN TYP MAX 1200 0.800 250 1000 ± ...

Page 2

... T = 25° 125° 25° 125° See MIL-STD-750 Method 3471 4 Starting ≤ [Cont.], RECTANGULAR PULSE DURATION (SECONDS) APT12080JVFR MIN TYP MAX 6500 7800 530 740 250 375 325 485 29 45 DSS 145 215 DSS MIN TYP MAX 15 60 1.3 ...

Page 3

V GS =5V, 6V, 7V, 10V & 15V 120 240 360 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS > (ON ...

Page 4

... Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) APT12080JVFR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150° =+25°C 0.4 0.8 1.2 1.6 2 ...

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