APTM100DA40T1G Microsemi Power Products Group, APTM100DA40T1G Datasheet - Page 2

• Manufacturer Part Number: APTM100DA40T1G
• Description: MOSFET N-CH 1000V 20A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100DA40T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 357W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Dynamic Characteristics
Chopper diode ratings and characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Thermal and package characteristics
Symbol Characteristic
Torque
R
V
V
V
T
T
R
T
I
I
C
C
C
Q
Q
I
DS(on)
Wt
Q
V
Q
GS(th)
T
DSS
GSS
T
d(off)
T
T
d(on)
RRM
t
ISOL
RM
I
STG
thJC
oss
rr
iss
rss
F
gs
gd
C
g
r
f
F
rr
J
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
All ratings @ T
Test Conditions
V
V
f = 1MHz
V
V
I
Resistive switching @ 25°C
V
V
I
R
j
Test Conditions
V
V
V
V
V
D
D
www.microsemi.com
G
= 25°C unless otherwise specified
GS
DS
GS
Bus
GS
Bus
= 16A
= 16A
DS
GS
GS
GS
GS
= 2.2Ω
= 0V
= 25V
= 10V
= 15V
= 500V
= 667V
=1000V
= 0V
= 10V, I
= V
= ±30 V
Test Conditions
V
I
I
I
I
V
di/dt =200A/µs
F
F
F
F
R
R
= 30A
= 60A
= 30A
= 30A
=1200V
DS
= 800V
, I
D
D
To heatsink
= 2.5mA
= 16A
APTM100DA40T1G
Transistor
Diode
T
T
T
T
T
T
T
T
T
Tc = 80°C
j
j
j
j
j
j
j
j
j
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
M4
Min
1200
2500
Min
Min
Min
-40
-40
-40
2.5
3
6800
1700
Typ
125
700
260
130
Typ
Typ
300
380
360
92
33
Typ
400
46
39
35
2.6
3.2
1.8
30
4
Max
±100
Max
0.35
Max
Max
150
125
100
100
500
1.2
4.7
100
500
480
3.1
80
5
°C/W
Unit
Unit
Unit
Unit
N.m
mΩ
µA
nC
µA
nA
nC
pF
ns
°C
ns
V
A
V
V
V
g
2 – 5