APT8014JFLL Microsemi Power Products Group, APT8014JFLL Datasheet - Page 4

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APT8014JFLL

Manufacturer Part Number
APT8014JFLL
Description
MOSFET N-CH 800V 42A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT8014JFLL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
285nC @ 10V
Input Capacitance (ciss) @ Vds
7238pF @ 25V
Power - Max
595W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT8014JFLL
Manufacturer:
APT
Quantity:
15 500
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
3000
2500
2000
1500
1000
160
140
120
100
500
168
100
80
60
40
20
50
10
16
12
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
5
1
8
4
0
FIGURE 10, MAXIMUM SAFE OPERATING AREA
10
10
0
1
V
V
R
T
L = 100µH
E
diode reverse recovery.
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
DS
DD
J
T C =+25°C
T J =+150°C
SINGLE PULSE
G
ON
LIMITED BY R DS (ON)
DD
J
G
= 125°C
OPERATION HERE
= 3Ω
= 125°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
50
= 3Ω
D
= 533V
includes
20
= 533V
20
= 52A
Q
g
100 150 200 250 300 350 400
, TOTAL GATE CHARGE (nC)
30
30
10
E
V DS = 400V
t
on
d(on)
V DS = 160V
E
40
off
40
I
I
D
D
(A)
(A)
50
50
100
60
V DS = 640V
t
60
d(off)
70
70
800
80
80
10mS
100µS
1mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
12000
10000
1,000
8000
6000
4000
2000
100
200
100
140
120
100
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
80
60
40
20
1
0
0
10
0
0
0.3
V
V
V
I
T
L = 100µH
E
diode reverse recovery.
V
R
T
L = 100µH
D
DS
SD
J
J
DD
ON
DD
G
= 52A
= 125°C
= 125°C
5
= 3Ω
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
T J =+150°C
= 533V
includes
= 533V
20
0.5
R
10
10
G
, GATE RESISTANCE (Ohms)
30
15 20 25 30 35 40
0.7
20
40
E
I
on
D
0.9
T J =+25°C
(A)
t
r
50
30
1.1
t
f
60
40
E
1.3
off
70
C rss
C oss
45 50
C iss
1.5
50
80

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