APT60M80JVR Microsemi Power Products Group, APT60M80JVR Datasheet - Page 3

• Manufacturer Part Number: APT60M80JVR
• Description: MOSFET N-CH 600V 55A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT60M80JVR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 5mA
• Gate Charge (qg) @ Vgs: 870nC @ 10V
• Input Capacitance (ciss) @ Vds: 14500pF @ 25V
• Power - Max: 568W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
200
180
160
140
120
100
2.5
1.5
1.0
0.5
0.0
80
60
40
20
60
50
40
30
20
10
0
0
3
2
-50
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
25
0
V DS > I D (ON) x R DS (ON)MAX.
V
I
D
FIGURE 4, TRANSFER CHARACTERISTICS
GS
= 0.5 I
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
-25
GS
1
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
J
50
T
= 10V
, JUNCTION TEMPERATURE (°C)
D
C
T J = +25°C
[Cont.]
T J = +125°C
, CASE TEMPERATURE (°C)
Graph Deleted
2
0
25
3
75
50
4
100
75
5
T J = -55°C
100 125 150
6
125
7
150
8
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
180
160
140
120
100
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
80
60
40
20
0
-50
-50
0
0
V
V
GS
DS
FIGURE 5, R
-25
-25
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 10V @ 0.5 I
5
NORMALIZED TO
T
I
5
J
D
T
, JUNCTION TEMPERATURE (°C)
15 &10V
, DRAIN CURRENT (AMPERES)
C
10
, CASE TEMPERATURE (°C)
0
0
V GS =10V
10
DS
15
25
25
D
(ON) vs DRAIN CURRENT
[Cont.]
15
20
50
50
25
75
75
6.5V
6V
20
V GS =20V
100 125 150
100 125 150
30
5.5V
25
5V
35
4.5V
APT60M80JVR
4V
30
40