APTC60HM70T3G Microsemi Power Products Group, APTC60HM70T3G Datasheet - Page 5

• Manufacturer Part Number: APTC60HM70T3G
• Description: MOSFET PWR MOD FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTC60HM70T3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 39A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 3.9V @ 2.7mA
• Gate Charge (qg) @ Vgs: 259nC @ 10V
• Input Capacitance (ciss) @ Vds: 7000pF @ 25V
• Power - Max: 250W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
100
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Breakdown Voltage vs Temperature
Threshold Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
T
10
, Drain to Source Voltage (V)
C
, Case Temperature (°C)
0
0
25
25 50 75 100 125 150
20
50
30
75 100 125 150
40
Coss
Crss
Ciss
50
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1000
100
14
12
10
8
6
4
2
0
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Gate Charge vs Gate to Source Voltage
0
1
APTC60HM70T3G
limited by R
I
T
-50 -25
D
J
=39A
V
=25°C
Maximum Safe Operating Area
DS
50
V
I
T
D
ON resistance vs Temperature
GS
= 39A
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
=10V
Single pulse
T
T
DS
J
C
Gate Charge (nC)
=150°C
100
=25°C
on
0
10
25 50 75 100 125 150
150
V
DS
=300V
200
100
V
DS
=120V
V
100 µs
250
DS
10 ms
1 ms
=480V
1000
300
5 - 6