APTM120DDA57T3G Microsemi Power Products Group, APTM120DDA57T3G Datasheet

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APTM120DDA57T3G

Manufacturer Part Number
APTM120DDA57T3G
Description
MOSFET MOD DUAL BOOST CHOP SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM120DDA57T3G

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
684 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
187nC @ 10V
Input Capacitance (ciss) @ Vds
5155pF @ 25V
Power - Max
390W
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
All multiple inputs and outputs must be shorted together
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
26
27
Dual Boost chopper
29
30
31
32
Example: 13/14 ; 29/30 ; 22/23 …
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
28 27 26
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
15
CR1
Q1
2
29
3
25
4
30
22
23
13
23 22
14
7
8
7
31
Parameter
R1
8
20
CR2
32
10
19
Q2
18
11 12
16
16
15
14
13
4
3
www.microsemi.com
Application
Features
Benefits
V
R
I
D
T
T
T
DSS
DSon
c
c
c
= 25°C
= 80°C
= 25°C
= 17A @ Tc = 25°C
APTM120DDA57T3G
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
RoHS Compliant
-
-
-
-
-
-
= 1200V
= 570mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
Max ratings
DSon
1200
3000
±30
684
390
17
13
68
22
50
®
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTM120DDA57T3G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM120DDA57T3G V = 1200V DSS R = 570mΩ typ @ Tj = 25°C DSon I = 17A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM120DDA57T3G = 25°C unless otherwise specified j Test Conditions Min V = 0V,V = 1200V T = 25° 0V,V = 1000V T = 125°C GS ...

Page 3

... Resistance @ 25° 298.15 K 25/  exp B   SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTM120DDA57T3G Transistor Diode To heatsink R T: Thermistor temperature 25    Thermistor value     −  25 ...

Page 4

... V , Drain to Source Voltage ( Drain Current DS(on) 1.4 Normalized to V =10V @ 8.5A 1 1.1 1 0.9 0 Drain Current (A) D APTM120DDA57T3G Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds 250µs pulse test @ < 0.5 duty cycle Drain Current vs Case Temperature 20 16 ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Ciss Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM120DDA57T3G ON resistance vs Temperature 2.5 V =10V GS I =8.5A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 100 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM120DDA57T3G 80 t ...

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