APTM100SK18TG Microsemi Power Products Group, APTM100SK18TG Datasheet

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... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100SK18TG V = 1000V DSS R = 180mΩ typ @ Tj = 25°C DSon I = 43A @ Tc = 25°C D ...

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... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM100SK18TG = 25°C unless otherwise specified j Test Conditions Min V = 0V,V = 1000V T = 25° 0V,V = 800V T = 125°C GS ...

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... R : Thermistor value     −     25 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : www.microsemi.com APTM100SK18TG Min Typ Max Unit 0.16 °C/W 0.9 2500 V -40 150 °C -40 125 -40 100 2.5 4.7 N.m 160 g Min ...

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... Drain Current DS(on) 1.4 Normalized to V =10V @ 21.5A 1 =10V 1 0.9 0 Drain Current (A) D APTM100SK18TG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 160 V 7V 140 250µs pulse test @ < 0.5 duty cycle 120 6.5V 100 5. Drain Current vs Case Temperature ...

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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM100SK18TG ON resistance vs Temperature 2.5 V =10V GS I =21.5A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100SK18TG 80 V ...