APTM10DUM05TG Microsemi Power Products Group, APTM10DUM05TG Datasheet - Page 4

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APTM10DUM05TG

Manufacturer Part Number
APTM10DUM05TG
Description
MOSFET MOD DUAL COMMON SRC SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10DUM05TG

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 125A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
278A
Vgs(th) (max) @ Id
4V @ 5mA
Gate Charge (qg) @ Vgs
700nC @ 10V
Input Capacitance (ciss) @ Vds
20000pF @ 25V
Power - Max
780W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
1200
1000
1.2
1.1
0.9
0.8
0.1
800
600
400
200
0.00001
1
0
0
Low Voltage Output Characteristics
0
0
Normalized to
V
0.9
0.7
0.5
0.3
0.1
0.05
GS
V
25
=10V @ 125A
DS
4
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
, Drain to Source Voltage (V)
R
50
I
DS(on)
D
V
, Drain Current (A)
8
GS
0.0001
=15V, 10V & 9V
75 100 125 150 175 200
vs Drain Current
12
16
8V
20
7V
V
V
0.001
GS
GS
24
=20V
=10V
rectangular Pulse Duration (Seconds)
6V
28
www.microsemi.com
Single Pulse
0.01
240
200
160
120
300
250
200
150
100
80
40
APTM10DUM05TG
50
0
0
DC Drain Current vs Case Temperature
25
0
V
250µs pulse test @ < 0.5 duty cycle
DS
0.1
V
> I
GS
1
T
Transfert Characteristics
D
, Gate to Source Voltage (V)
50
C
(on)xR
, Case Temperature (°C)
2
T
J
DS
=125°C
T
75
(on)MAX
J
=25°C
3
1
100
4
5
T
125
J
=-55°C
6
150
10
7
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