APTM20DUM10TG Microsemi Power Products Group, APTM20DUM10TG Datasheet - Page 6

• Manufacturer Part Number: APTM20DUM10TG
• Description: MOSFET MOD DUAL COMMON SRC SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM20DUM10TG

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 175A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 224nC @ 10V
• Input Capacitance (ciss) @ Vds: 13700pF @ 25V
• Power - Max: 694W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
2.5
1.5
0.5
350
300
250
200
150
100
2
1
0
90
80
70
60
50
40
30
20
10
50
0
0
20
0
Operating Frequency vs Drain Current
V
R
T
L=100µH
V
R
T
L=100µH
J
J
DS
DS
G
G
Switching Energy vs Current
=125°C
=125°C
=2.5Ω
=2.5Ω
50
=133V
=133V
40
50
Switching
Delay Times vs Current
I
I
D
Hard
D
I
, Drain Current (A)
100
60
D
, Drain Current (A)
100
, Drain Current (A)
80 100 120 140 160
150
150
ZVS
ZCS
200
E
200
on
V
D=50%
R
T
T
J
C
DS
G
td
td
=125°C
=75°C
=2.5Ω
=133V
(on)
(off)
250
E
250
off
300
300
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1000
2.5
1.5
100
160
140
120
100
3
2
1
10
APTM20DUM10TG
80
60
40
20
1
Source to Drain Diode Forward Voltage
Switching Energy vs Gate Resistance
0
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
V
I
T
L=100µH
0
D
DS
J
=150A
=125°C
V
R
T
L=100µH
E
V
=133V
T
DS
J
Rise and Fall times vs Current
G
on
SD
=125°C
=2.5Ω
J
=133V
=150°C
50
Gate Resistance (Ohms)
, Source to Drain Voltage (V)
5
I
D
, Drain Current (A)
100
T
J
=25°C
10
150
200
15
E
250
E
off
t
on
f
t
r
300
20
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