APTC80TA15PG Microsemi Power Products Group, APTC80TA15PG Datasheet
APTC80TA15PG
Specifications of APTC80TA15PG
Related parts for APTC80TA15PG
APTC80TA15PG Summary of contents
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... Module can be configured as a three phase bridge W • Module can be configured as a boost followed by a full bridge • RoHS Compliant T = 25° 80° 25°C c www.microsemi.com APTC80TA15PG DSon Symmetrical design Lead frames for power connections Max ratings Unit 800 110 ±30 V 150 mΩ 277 ...
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... D G Test Conditions Tc = 25° 80° 0V 28A 28A T = 25° 400V 25°C di /dt = 200A/µ ≤ V ≤ 150° DSS j www.microsemi.com APTC80TA15PG Min Typ Max Unit 50 µA 375 150 mΩ 2.1 3 3.9 V ±150 nA Min Typ Max Unit 4507 pF 2092 108 180 ...
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... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTC80TA15PG Min 2500 -40 -40 -40 To heatsink M6 3 www.microsemi.com Typ Max Unit 0.45 ° ...
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... Pulse Duration (Seconds) 100 Drain Current vs Case Temperature =10V =20V www.microsemi.com APTC80TA15PG 0 Transfert Characteristics V > I (on)xRDS(on)MAX DS D 250µs pulse test @ < 0.5 duty cycle T =25° =125°C T =-55° Gate to Source Voltage ( 100 125 150 T , Case Temperature (° – ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 1000 Coss 100 Crss Drain to Source Voltage (V) DS APTC80TA15PG ON resistance vs Temperature 3.0 V =10V 14A 2.5 D 2.0 1.5 1.0 0.5 0.0 -50 0 150 T , Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...
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... E off 500 Source to Drain Diode Forward Voltage 1000 V =533V DS D=50% R =2.5Ω =125°C 100 J T =75° 0.2 V www.microsemi.com APTC80TA15PG Rise and Fall times vs Current t f =533V DS =2.5Ω =125° Drain Current (A) D =533V DS =28A D =125° off ...