APTM20AM08FTG Microsemi Power Products Group, APTM20AM08FTG Datasheet

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... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM20AM08FTG V = 200V DSS R = 8mΩ typ @ Tj = 25°C DSon I = 208A @ Tc = 25°C D ...

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... Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 208A di/dt ≤ 700A/µ APTM20AM08FTG = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 200V 125°C ...

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... Symbol Characteristic R Resistance @ 25° 298.15 K 25/  exp B   SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM20AM08FTG To Heatsink R T: Thermistor temperature 25    Thermistor value     −  ...

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... R vs Drain Current DS(on) 1.2 Normalized to V =10V @ 104A GS 1.1 1 0.9 0 100 150 I , Drain Current (A) D APTM20AM08FTG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 600 V 500 250µs pulse test @ < 0.5 duty cycle 400 9V 8.5V 300 8V 200 7.5V 7V 100 6.5V ...

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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM20AM08FTG ON resistance vs Temperature 2.5 V =10V 104A 2.0 D 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM20AM08FTG 160 V ...