APTM100A18FTG Microsemi Power Products Group, APTM100A18FTG Datasheet

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APTM100A18FTG

Manufacturer Part Number
APTM100A18FTG
Description
MOSFET MODULE PHASE LEG SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM100A18FTG

Fet Type
2 N-Channel (Half Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 21.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
372nC @ 10V
Input Capacitance (ciss) @ Vds
10400pF @ 25V
Power - Max
780W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
G1
S1
G2
S2
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
S1
G1
VB US
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Phase leg
0/VBUS
Q1
Q2
0/VBUS
G2
S2
G2
S2
Parameter
VBUS
OUT
NTC2
NTC1
NT C2
NT C1
OUT
OUT
www.microsemi.com
Application
Features
Benefits
V
R
I
D
T
T
T
DSS
DSon
c
c
c
= 25°C
= 80°C
= 25°C
= 43A @ Tc = 25°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS compliant
-
-
-
-
-
-
-
-
= 1000V
= 180mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
Symmetrical design
Lead frames for power connections
APTM100A18FTG
Max ratings
DSon
1000
3000
172
±30
210
780
43
33
25
50
®
FREDFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTM100A18FTG Summary of contents

Page 1

... Low junction to case thermal resistance • Solderable terminals both for power and signal for NTC2 easy PCB mounting NTC1 • Low profile • RoHS compliant T = 25° 80° 25°C c www.microsemi.com APTM100A18FTG ® FREDFETs DSon Max ratings Unit 1000 172 ±30 V 210 mΩ 780 ...

Page 2

... 43A 125° 670V 25°C di /dt = 200A/µ 125°C j ≤ V ≤ 150° DSS j www.microsemi.com APTM100A18FTG Min Typ Max Unit 200 = 25°C µA 1000 = 125°C 180 210 mΩ ±150 nA Min Typ Max Unit 10.4 nF 1.76 0.32 372 ...

Page 3

... R : Thermistor value     −     25 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : www.microsemi.com APTM100A18FTG Min Typ Max Unit 0.16 °C/W 2500 V -40 150 °C -40 125 -40 100 M5 2.5 4.7 N.m 160 g Min Typ ...

Page 4

... Drain Current DS(on) 1.4 Normalized to V =10V @ 21.5A 1 =10V 1 0.9 0 Drain Current (A) D APTM100A18FTG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 160 V 7V 140 250µs pulse test @ < 0.5 duty cycle 120 6.5V 100 5. Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM100A18FTG ON resistance vs Temperature 2.5 V =10V GS I =21.5A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100A18FTG 80 V ...

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