APTM50SKM17G Microsemi Power Products Group, APTM50SKM17G Datasheet - Page 5

• Manufacturer Part Number: APTM50SKM17G
• Description: MOSFET N-CH 500V 180A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50SKM17G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 5V @ 10mA
• Gate Charge (qg) @ Vgs: 560nC @ 10V
• Input Capacitance (ciss) @ Vds: 28000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100
10
-50 -25
-50 -25
Capacitance vs Drain to Source Voltage
Threshold Voltage vs Temperature
0
Breakdown Voltage vs Temperature
T
V
J
DS
, Junction Temperature (°C)
T
, Drain to Source Voltage (V)
C
10
, Case Temperature (°C)
0
0
25
25
20
50 75 100 125 150
50
30
75 100 125 150
40
Coss
Ciss
Crss
50
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1000
100
10
14
12
10
1
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
Gate Charge vs Gate to Source Voltage
1
0
APTM50SKM17G
limited by R
-50 -25
I
T
D
J
V
=180A
=25°C
Single pulse
T
T
100 200 300 400 500 600 700
Maximum Safe Operating Area
DS
V
I
ON resistance vs Temperature
J
C
D
T
=150°C
GS
=90A
=25°C
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
=10V
DSon
Gate Charge (nC)
0
10
25
V
50 75 100 125 150
DS
=250V
100
V
DS
=100V
V
DS
100 us
100 ms
10 ms
=400V
1 ms
1000
5 – 7