APTM100DAM90G Microsemi Power Products Group, APTM100DAM90G Datasheet - Page 6

• Manufacturer Part Number: APTM100DAM90G
• Description: MOSFET N-CH 1000V 78A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100DAM90G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 39A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 78A
• Vgs(th) (max) @ Id: 5V @ 10mA
• Gate Charge (qg) @ Vgs: 744nC @ 10V
• Input Capacitance (ciss) @ Vds: 20700pF @ 25V
• Power - Max: 1250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
200
160
120
250
200
150
100
10
80
40
50
8
6
4
2
0
0
0
20
20
0
Operating Frequency vs Drain Current
V
D=50%
R
T
T
V
R
T
L=100µH
V
R
T
L=100µH
DS
J
C
G
=125°C
=75°C
Switching Energy vs Current
J
=1.2Ω
DS
G
J
DS
G
=125°C
40
=670V
=125°C
40
10
=1.2Ω
=1.2Ω
=670V
=670V
Delay Times vs Current
I
I
D
I
60
D
60
20
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
80 100 120 140 160
80
switching
30
ZCS
Hard
100 120 140 160
40
E
ZVS
on
E
50
t
off
d(on)
t
d(off)
www.microsemi.com
60
70
1000
100
80
60
40
20
10
14
12
10
1
0
8
6
4
2
0
0.2 0.4 0.6 0.8
20
Source to Drain Diode Forward Voltage
APTM100DAM90G
0
Switching Energy vs Gate Resistance
V
R
T
L=100µH
DS
J
G
V
I
T
L=100µH
=125°C
D
=1.2Ω
V
DS
J
Rise and Fall times vs Current
=78A
=670V
40
=125°C
SD
=670V
T
, Source to Drain Voltage (V)
J
Gate Resistance (Ohms)
=150°C
I
2
60
D
, Drain Current (A)
E
off
80
T
1
4
J
100 120 140 160
=25°C
1.2 1.4 1.6 1.8
t
t
f
r
6
E
off
E
on
8
6 – 6