APTM50DUM19G Microsemi Power Products Group, APTM50DUM19G Datasheet - Page 4

• Manufacturer Part Number: APTM50DUM19G
• Description: MOSFET MOD DUAL COMMON SRC SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50DUM19G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 163A
• Vgs(th) (max) @ Id: 5V @ 10mA
• Gate Charge (qg) @ Vgs: 492nC @ 10V
• Input Capacitance (ciss) @ Vds: 22400pF @ 25V
• Power - Max: 1136W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.12
0.08
0.06
0.04
0.02
700
600
500
400
300
200
100
0.1
0.00001
0
0
0
0
Low Voltage Output Characteristics
Normalized to
V
0.9
0.7
0.5
0.05
GS
V
0.3
0.1
V
GS
DS
=10V @ 81.5A
=10&15V
, Drain to Source Voltage (V)
R
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5
100
DS
I
D
, Drain Current (A)
(on) vs Drain Current
0.0001
10
200
15
V
GS
=10V
V
300
GS
=20V
20
8V
rectangular Pulse Duration (Seconds)
0.001
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7.5V
6.5V
5.5V
7V
6V
Single Pulse
400
25
0.01
500
400
300
200
100
180
160
140
120
100
0
80
60
40
20
APTM50DUM19G
0
DC Drain Current vs Case Temperature
0
25
V
250µs pulse test @ < 0.5 duty cycle
DS
V
0.1
1
> I
GS
T
D
Transfert Characteristics
, Gate to Source Voltage (V)
(on)xR
50
C
, Case Temperature (°C)
2
T
J
DS
=125°C
3
(on)MAX
75
T
J
=25°C
4
1
100
5
6
125
T
J
=-55°C
7
10
150
8
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