IXFN64N50PD2 IXYS, IXFN64N50PD2 Datasheet
IXFN64N50PD2
Manufacturer Part Number
IXFN64N50PD2
Description
MOSFET N-CH 500V 52A SOT-227B
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFN64N50PD2.pdf
(2 pages)
Specifications of IXFN64N50PD2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
52A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
186nC @ 10V
Input Capacitance (ciss) @ Vds
11000pF @ 25V
Power - Max
625W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
500
Id25, Tc = 25°c, (a)
50
Id90, Tc = 90°c, (a)
-
Rds(on), Max, Tj = 25°c, (mohms)
0.085
Tf, Typ, (ns)
22
Tr, Typ, (ns)
25
Rthjc, Max, (ºc/w)
0.2
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN64N50PD2
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
IXFN64N50PD2
Quantity:
100
PolarHV
Power MOSFET
Boost Configuration for
PFC Circuits
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
DSS
DGR
GS
GSM
AR
AS
D
GS(th)
DS(on)
D
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
Mounting Ttorque
Terminal connection torque
Test Conditions
V
V
V
V
V
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ± 30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
D
= 500 µA
= 8 mA
G
= 32 A, Note 1
DS
= 2 Ω
= 0
GS
Preliminary Technical Information
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXFN 64N50PD2
,
500
Min.
3.0
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.5 / 13 Nm/lb-in
5 / 13 Nm/lb-in
± 30
± 40
500
500
200
625
150
1.5
52
36
50
10
30
1
± 200
3
Max.
5.0
50
85
1
V/ns
4
m Ω
mA
mJ
nA
µA
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
miniBLOC, SOT-227 B (IXFN)
1 = Source
2 = Gate
Features
l
•
•
•
l
l
Advantages
l
l
l
l
Fast intrinsic diode in boost
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
configuration
Easy to mount
Space savings
Tightly coupled FRED diode
High power density
V
I
R
t
D25
rr
DS(on)
DSS
E153432
2
= 500
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
1
3 = Drain / Diode anode
4 = Diode / Diode cathode
200
3
52
85 m Ω Ω Ω Ω Ω
DS99507E(05/06)
4
ns
A
V
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IXFN64N50PD2 Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS Note 1 DS(on © 2006 IXYS All rights reserved Preliminary Technical Information IXFN 64N50PD2 Maximum Ratings 500 = 1 MΩ 500 GS ± 30 ± 200 1.5 ≤ DSS 625 -55 ... +150 150 -55 ... +150 1 Nm/lb- Nm/lb-in 30 Characteristic Values Min. Typ. Max. ...
Page 2
... IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. ...