IXFN34N100 IXYS, IXFN34N100 Datasheet
IXFN34N100
Specifications of IXFN34N100
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IXFN34N100 Summary of contents
Page 1
... ± GSS DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved IXFN 34N100 Maximum Ratings 1000 = 1 MΩ 1000 GS ±20 ±30 34 136 ≤ DSS 700 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 Nm/lb.in. ...
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... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. , pulse test 18 ...
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... GS 2.0 1 125 J 1.6 1.4 1 1.0 0 Amperes D Figure 3. R normalized to 0.5 I DS(on) vs -50 - Degrees C C Figure 5. Drain Current vs. Case Temperature © 2003 IXYS All rights reserved value D25 75 100 125 150 IXFN 34N100 50 V =10V T = 125 Volts DS Figure 2. Output Characteristics at 125 V = 10V GS 2 ...
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... Figure 9. Forward Voltage Drop of the Intrinsic Diode 1.000 0.100 0.010 0.001 Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 30000 10000 1000 100 400 500 600 ...