FB180SA10 Vishay, FB180SA10 Datasheet - Page 2

• Manufacturer Part Number: FB180SA10
• Description: MOSFET N-CH 100V 180A SOT-227
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of FB180SA10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 108A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 380nC @ 10V
• Input Capacitance (ciss) @ Vds: 10700pF @ 25V
• Power - Max: 480W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *FB180SA10; VS-FB180SA10; VS-FB180SA10; VSFB180SA10; VSFB180SA10

FB180SA10
Source-Drain Ratings and Characteristics
Notes:
Electrical Characteristics @ T
I
I
V
t
Q
t
I
I
V
DV
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
SM
on
S
DSS
rr
GSS
d(on)
d(off)
f
r
2
SD
fs
s
rr
Repetitive rating; pulse width limited by
(BR)DSS
DS(on)
GS(th)
g
gd
iss
oss
rss
R
gs
max. junction temperature. ( See fig. 11 )
Starting T
(BR)DSS
G
= 25W , I
/DT
J
J
= 25°C, L =43µH
AS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 180A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Pulse width £ 300µs; duty cycle £ 2%.
I
T
SD
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.093 –––
––– 10700 –––
–––
–––
–––
–––
––– 300
–––
2.0
93
J
£ 150°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
£ 180A, di/dt £83A/µs, V
1300 –––
2800 –––
–––
–––
–––
2.6
–––
––– 0.0065
–––
–––
–––
–––
–––
––– -200
250
110
351
181
335
5.0
40
45
450
720
1.3
3.9
–––
–––
500
200
380
–––
–––
–––
–––
–––
180
165
4.0
50
60
V/°C
ns
µC
µA
nA
ns
nC
nH
V
pF
A
V
W
V
S
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
V
V
V
V
V
V
V
V
I
V
V
I
R
R
Between lead,
and center of die contact
ƒ = 1.0MHz, See Fig. 5
Reference to 25°C, I
V
V
V
DD
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25°C, I
= 25°C, I
= 180A
= 180A
£ V
= 0.27W , See Fig. 10
= 2.0W (Internal)
= V
= 80V, V
= 0V, I
= 10V, I
= 25V, I
= 100V, V
= 20V
= 80V
= 10.0V, See Fig. 6 and 13
= 0V
= 25V
= -20V
= 50V
(BR)DSS
GS
, I
F
S
D
D
Conditions
D
D
= 180A
= 180A, V
= 250µA
GS
,
Conditions
= 250µA
= 108A
= 108A
GS
= 0V, T
= 0V
www.irf.com
D
= 1mA
GS
J
= 125°C
= 0V
S
+L
D
)