FPDB50PH60 Fairchild Semiconductor, FPDB50PH60 Datasheet - Page 5

IC SMART POWER MOD 50A SPM27-HA

FPDB50PH60

Manufacturer Part Number
FPDB50PH60
Description
IC SMART POWER MOD 50A SPM27-HA
Manufacturer
Fairchild Semiconductor
Type
IGBTr
Datasheet

Specifications of FPDB50PH60

Configuration
2 Phase
Current
30A
Voltage
600V
Voltage - Isolation
2500Vrms
Package / Case
SPM27HA
Operating Temperature (max)
125C
Operating Temperature (min)
-20C
Pin Count
27
Mounting
Through Hole
Case Length
44mm
Case Height
5.5mm
Screening Level
Commercial
Input Voltage
5V
Output Voltage
600V
No. Of Outputs
1
Power Dissipation Pd
143W
No. Of Pins
27
Operating Temperature Range
-20°C To +125°C
Filter Terminals
Through Hole
Output Current Max
5mA
Rohs Compliant
Yes
Frequency
20kHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FPDB50PH60
Manufacturer:
FSC
Quantity:
500
Company:
Part Number:
FPDB50PH60
Quantity:
110
©2005 Fairchild Semiconductor Corporation
Electrical Characteristics
Converter Part
Note
3. t
Control Part
Note
4. The fault-out pulse width t
IGBT saturation voltage
High-side diode voltage
Low-side diode voltage
Switching Times
Current sensing resistor
Collector - emitter
Leakage Current
Quiescent V
rent
Fault Output Voltage
Over Current Trip Level
Supply Circuit Under-
Voltage Protection
Fault-out Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
Resistance of Thermistor
internally. For the detailed information, please see Fig. 4
ON
and t
OFF
Item
Item
include the propagation delay time of the internal drive IC. t
CC
Supply Cur-
FOD
depends on the capacitance value of C
Symbol
V
R
Symbol
V
V
t
UV
UV
V
t
C(OFF)
I
V
CE(sat)
C(ON)
SENSE
V
IN(OFF)
t
I
OC(ref)
V
QCCL
t
IN(ON)
V
R
t
OFF
CES
FOD
ON
t
I
FOH
FOL
FH
FL
rr
rr
CCD
CCR
TH
V
V
V
V
Detection Level
Reset Level
C
Applied between IN - COM
@ T
@ T
(T
CC
SC
SC
CC
FOD
V
I
I
V
V
(Note 3)
V
C
C
J
CC
PN
IN
CE
C
C
= 15V, IN = 0V V
= 0V, V
= 1V, V
= 15V
= 25°C, Unless Otherwise Specified)
= 50A
= 50A
= 33nF (Note 4)
= 25°C (Note Fig. 9)
= 80°C (Note Fig. 9)
= 0V ↔ 5V, Inductive Load
=15V, V
= 400V, V
= V
CES
FO
FO
FOD
Circuit: 4.7kΩ to 5V Pull-up
Circuit: 4.7kΩ to 5V Pull-up
C(ON)
IN
CC
= 5V; I
according to the following approximate equation : C
Condition
and t
Condition
= 15V, I
CC
C(OFF)
C
=50A
- COM
C
are the switching time of IGBT itself under the given gate driving condition
=30A
Min.
1.8
Min.
0.45
10.7
11.2
-
-
-
-
-
-
-
-
-
-
4.5
1.4
3.0
-
-
-
-
-
FOD
Typ.
550
200
430
180
= 18.3 x 10
2.8
2.1
1.3
2.0
60
6
Typ.
12.4
5.76
-
11.9
0.5
1.8
50
-
-
-
-
-
Max.
-6
250
3.2
2.7
1.7
2.2
Max.
0.55
13.0
13.2
-
-
-
-
-
-
0.8
2.0
0.8
x t
26
-
-
-
-
FOD
[F]
December, 2005
Unit
mΩ
µA
Unit
ns
ns
ns
ns
ns
V
V
V
A
mA
ms
kΩ
kΩ
V
V
V
V
V
V
V

Related parts for FPDB50PH60