FSBF10CH60BT Fairchild Semiconductor, FSBF10CH60BT Datasheet - Page 8

• Manufacturer Part Number: FSBF10CH60BT
• Description: MODULE SPM 600V 10A 3PH SPM27-JA
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSBF10CH60BT

• Configuration: 3 Phase
• Current: 10A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27JA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FSBF10CH60BT Rev. C
Bootstrap Diode Part
Note:
6. Built in bootstrap diode includes around 15 Ω resistance characteristic.
Recommended Operating Conditions
Symbol
dV
dV
f
V
Symbol
t
V
V
V
PWM
dead
CC
BS
SEN
CC
PN
BS
/dt,
/dt
V
t
rr
F
Supply Voltage
Control Supply Voltage
High-side Bias Voltage
Control supply variation
Blanking Time for Preventing
Arm-short
PWM Input Signal
Voltage for Current Sensing
Forward Voltage
Reverse Recovery Time
Parameter
Parameter
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Figure 6. Built in Bootstrap Diode Characteristics
0
1
Built in Bootstrap Diode V
2
Applied between P - N
Applied between V
Applied between V
V
For Each Input Signal
-40 ° C ≤ T
Applied between N
(Including surge voltage)
B(W)
3
I
I
F
F
- V
= 0.1A, T
= 0.1A, T
4
S(W)
C
≤ 125°C, -40 ° C ≤ T
5
Conditions
6
C
C
= 25°C
= 25°C
CC(H)
B(U)
U
Conditions
V
7
, N
8
F
U
[V]
V
- V
, N
, V
, N
8
F
S(U)
V
CC(L)
-I
W
, N
F
9
Characteristic
, V
- COM
W
J
- COM
10
≤ 150°C
B(V)
11
- V
S(V)
12
,
T
13
C
=25 ℃
14
Min.
13.5
13.0
1.5
-1
-4
Min.
-
-
15
-
-
Value
Typ.
300
Typ.
15
15
2.5
-
-
-
80
Max.
Max.
16.5
18.5
400
20
1
4
-
-
-
www.fairchildsemi.com
Units
Units
V/ μ s
kHz
ns
μ s
V
V
V
V
V