VVZB120-12IO2 IXYS, VVZB120-12IO2 Datasheet
VVZB120-12IO2
Manufacturer Part Number
VVZB120-12IO2
Description
3-PHASE BRIDGE RECT 1600V 120A
Manufacturer
IXYS
Specifications of VVZB120-12IO2
Structure
Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Number Of Scrs, Diodes
3 SCRs, 3 Diodes
Voltage - Off State
1200V
Current - Gate Trigger (igt) (max)
100mA
Current - On State (it (av)) (max)
120A
Current - Non Rep. Surge 50, 60hz (itsm)
750A @ 50MHz
Current - Hold (ih) (max)
200mA
Mounting Type
Chassis Mount
Package / Case
V2-PAK
Mounting Style
Screw
Vrrm, Rect, (v)
1200
Idav, Rec, (a)
120
@ Th, Rect, (°c)
-
@ Tc, Rect, (°c)
80
Vces, Igbt, (v)
1200
Ic80, Igbt, (a)
100
Vrrm, Fast Diode, (v)
1200
If(av), Fast Diode, (a)
27
Trr, Fast Diode, (ns)
40
Package Style
V2-Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - On State (it (rms)) (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
Q2367690
Three Phase Half Controlled
Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
V
1200
1600
(T) = NTC optional
Symbol
I
I
I
I
(di/dt)
(dv/dt)
P
P
V
V
I
I
I
P
V
I
I
I
I
P
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
Preliminary data
dAV
FRMS
FSM
2
C25
C80
CM
F(AV)
F(RMS)
FRM
FSM
V
t
RRM
GM
GAVM
CES
GE
tot
RRM
tot
/I
/I
TSM
TRMS
cr
cr
Conditions
T
T
T
T
T
T
T
f = 50 Hz, t
V
I
di
T
R
T
I
T
Continuous
T
T
t
T
T
T
T
T
T
T
G
T
p
case
case
VJ
VJ
VJ
VJ
VJ
D
VJ
VJ
VJ
case
case
case
case
case
case
VJ
VJ
case
GK
G
= 0.45 A,
/dt = 0.45 A/µs
=
= I
= T
= T
= T
= 80°C, sinusoidal 120°
= 80°C, per leg
= ∞; method 1 (linear voltage rise)
= 25°C, t = 10 ms, V
= 150°C, t = 10 ms, V
= 25°C, t = 10 ms, V
= 150°C, t = 10 ms, V
= 25°C to 150°C
= Pulse width limited by T
= 45°C, t = 10 ms
= 150°C, t = 10 ms
= 25°C, DC
= 80°C, DC
= 80°C
= 80°C, rectangular d = 0.5
= 80°C, rectangular d = 0.5
= 80°C, t
= 80°C
Type
VVZB 120-12 io2(T)
VVZB 120-16 io2(T)
2
/
d(AV)
3
VJM
VJM
VJM
V
DRM
/3
; V
P
= 200 µs
DR
P
= 10 µs, f = 5 kHz
=
2
t
t
t
/
P
P
P
3
V
= 30 µs
= 300 µs
= 10 ms
DRM
repetitive, I
non repetitive, I
R
R
R
R
= 0 V
= 0 V
= 0 V
= 0V
VJM
T
= 150 A
T
= I
d(AV)
/3
Maximum Ratings
2810
2240
1000
1200
1200
± 20
120
750
670
150
500
140
100
280
570
200
180
0.5
tbd
77
10
27
38
64
5
1
A/µs
A/µs
V/µs
W
W
W
W
W
W
A
A
A
A
A
A
V
V
A
A
A
V
A
A
A
A
A
V
I
Features
• Soldering connections for PCB
• Isolation voltage 3600 V~
• Ultrafast freewheel diode
• Convenient package outline
• Optional NTC
Applications
• Drive Inverters with brake system
Advantages
• 2 functions in one package
• No external isolation
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
dAV
mounting
capability
RRM
= 1200/1600 V
= 120 A
VVZB 120
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VVZB120-12IO2 Summary of contents
Page 1
... FRM case 45° FSM 150° 80°C tot case Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Maximum Ratings 120 750 670 2810 2240 R repetitive 150 A ...
Page 2
... MHz, V ies 600 d(on Ω d(off) Inductive load 100 µ 125° off R thJC R thCH © 2004 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. DRM DRM = ∞ 200 µ DRM 1200 4.5 = 125° 125°C, ...
Page 3
... Weight typ. d Creep distance on surface S d Strike distance in air A a Maximum allowable acceleration R Thermistor 25 B 25/100 Dimensions 0.0394") © 2004 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ Maximum Ratings -40...+150 150 -40...+125 min 3000 3600 (M5) 2-2 ...