CSPESD304G ON Semiconductor, CSPESD304G Datasheet - Page 4

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CSPESD304G

Manufacturer Part Number
CSPESD304G
Description
4 CH. ESD PROTECTION WLCSP 5
Manufacturer
ON Semiconductor
Datasheet

Specifications of CSPESD304G

Capacitance
27pF
Power (watts)
0.2W, 1/5W
Package / Case
5-CSP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SYMBOL
V
C
V
I
V
V
DIODE
LEAK
DIODE
ESD
SIG
CL
Note 1: T
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
PARAMETER
Diode Reverse Breakdown Voltage
Diode Leakage Current
Signal Voltage
In-system ESD Withstand Voltage
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Diode Capacitance
a) Human Body Model, MIL-STD-883,
b) Contact Discharge per IEC 61000-4-2
Positive Clamp
Negative Clamp
Positive Transients
Negative Transients
A
Method 3015
=-40 to +85
°
C unless otherwise specified.
ELECTRICAL OPERATING CHARACTERISTICS
Rev. 2 | Page 4 of 8 | www.onsemi.com
CONDITIONS
I
V
I
Note 2
Note 2
At 2.5VDC Reverse Bias,
1MHz, 30mVAC
DIODE
DIODE
IN
=3.3V, T
= 10µA
= 10mA
A
=25° C
MIN
-0.4
+30
+15
5.5
5.6
22
TYP
-0.8
+15
6.8
27
-8
1
CSPESD304
MAX
100
-1.5
9.0
32
UNITS
nA
kV
kV
pF
V
V
V
V
V

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