IRF7303 International Rectifier, IRF7303 Datasheet

MOSFET 2N-CH 30V 4.9A 8-SOIC

IRF7303

Manufacturer Part Number
IRF7303
Description
MOSFET 2N-CH 30V 4.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7303

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7303

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0
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications.
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
Description
Absolute Maximum Ratings
Thermal Resistance Ratings
I
I
I
I
P
V
dv/dt
T
D
D
D
DM
J,
R
D
GS
@ T
@ T
@ T
T
@T
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
JA
STG
A
A
A
A
= 25°C
= 25°C
= 70°C
= 25°C
10 Sec. Pulsed Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
With these improvements,
Parameter
Parameter
GS
GS
@ 10V
@ 10V
GS
@ 10V
G 2
G 1
S 2
S 1
1
2
3
4
Top View
Typ.
HEXFET
–––
8
6
5
7
-55 to + 150
Max.
0.016
D1
D 1
D 2
D2
± 20
5.3
4.9
3.9
2.0
5.0
20
S O -8
®
R
IRF7303
Power MOSFET
Max.
DS(on)
62.5
V
DSS
PD - 9.1239D
= 0.050
= 30V
Units
°C/W
Units
W/°C
V/ns
°C
W
V
A
8/25/97

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IRF7303 Summary of contents

Page 1

... STG Thermal Resistance Ratings Parameter R Maximum Junction-to-Ambient JA HEXFET Top View @ 10V GS @ 10V GS @ 10V GS - 150 Typ. ––– 9.1239D IRF7303 ® Power MOSFET 30V DSS 0.050 D 2 DS(on Max. Units 5.3 4.9 A 3.9 20 2.0 W 0.016 W/°C ± 5.0 V/ns °C Max. ...

Page 2

... IRF7303 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Fig 1. Typical Output Characteristics 5° ° µ te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics 1000 100 4 100 IRF7303 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V 4 0µ ° 0 Drain-to-Source V oltage ( Fig 2. Typical Output Characteristics . Junction Temperature (° Fig 4. Normalized On-Resistance Vs ...

Page 4

... IRF7303 1000 800 600 400 200 rain-to-S ource Voltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 150 ° ° Source-to-Drain Voltage ( Fig 7. Typical Source-Drain Diode Forward Voltage TED 100 . TES SEE FIG Total Gate Charge ( Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 OPERATION IN THIS AREA LIMITED ...

Page 5

... RESPONSE) 0.1 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7303 D.U. 10V Pulse Width µs Duty Factor d(on) r d(off) ...

Page 6

... IRF7303 Q 10V Charge Fig 12a. Basic Gate Charge Waveform G GD Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig 12b. Gate Charge Test Circuit + ...

Page 7

... Fig 13. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period Current di/dt Diode Recovery dv/dt Forward Drop 5% IRF7303 + =10V ...

Page 8

... IRF7303 Package Outline SO8 Outline 0.25 (.010 0.25 (.010 Part Marking Information SO8 101 ° 101 INCHES DIM MIN MAX A .0532 .0688 A1 .0040 .0098 B .014 .018 C .0075 .0098 D .189 .196 E .150 .157 e .050 BASIC e1 .025 BASIC H .2284 .2440 K .011 .019 C L 0.16 ...

Page 9

... IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com (12 . GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7303 . . 8/97 ...

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