FDG1024NZ Fairchild Semiconductor, FDG1024NZ Datasheet - Page 3

• Manufacturer Part Number: FDG1024NZ
• Description: MOSFET N-CH DUAL 20V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG1024NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 2.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 150pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 321 m Ohms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1.2 A
• Power Dissipation: 0.36 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDG1024NZ Rev.C
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
6
5
4
3
2
1
0
Figure 3. Normalized On- Resistance
6
5
4
3
2
1
0
Figure 1.
-75
0
0
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
D
GS
DS
-50
= 1.2 A
T
= 4.5 V
vs Junction Temperature
= 5 V
J
V
V
= 125
V
0.4
GS
GS
T
DS
V
-25
J
GS
= 4.5 V
On-Region Characteristics
= 3.5 V
,
,
JUNCTION TEMPERATURE (
1
o
DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
C
0
0.8
T
25
J
µ
= -55
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
2
50
o
T
T
C
1.2
J
J
= 25
= 25 °C unless otherwise noted
75
o
C
o
3
100 125 150
C )
1.6
V
V
V
GS
GS
GS
= 1.8 V
= 2.5 V
= 1.5 V
µ
s
2.0
4
3
0.01
0.1
600
500
400
300
200
100
2.5
2.0
1.5
1.0
0.5
10
1
0
0.2
Figure 2.
Figure 4.
1.0
Forward Voltage vs Source Current
0
Figure 6.
vs Drain Current and Gate Voltage
V
V
GS
GS
T
V
= 0 V
J
1.5
= 1.5 V
0.4
SD
= 125
1
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
On-Resistance vs Gate to
GS
I
Source Voltage
D
Source to Drain Diode
o
,
,
2.0
C
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.6
2
V
GS
2.5
= 1.8 V
0.8
T
J
3
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
I
T
D
= -55
J
J
V
= 1.2 A
T
= 125
= 25
3.0
GS
J
= 25
= 3.5 V
o
µ
C
o
1.0
s
o
C
4
C
o
V
3.5
C
GS
= 2.5 V
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V
1.2
GS
5
4.0
= 4.5 V
µ
s
1.4
4.5
6