STL65DN3LLH5 STMicroelectronics, STL65DN3LLH5 Datasheet - Page 8

• Manufacturer Part Number: STL65DN3LLH5
• Description: MOSFET N-CH POWERFLAT
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL65DN3LLH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (5x6)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0059 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 22 V
• Continuous Drain Current: 65 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10881-2

Test circuits
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Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
Doc ID 18323 Rev 1
1000
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
Figure 18. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
μF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
μF
100nF
90%
STL65DN3LLH5
td
off
t
off
3.3
μF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD