FDG410NZ Fairchild Semiconductor, FDG410NZ Datasheet

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FDG410NZ

Manufacturer Part Number
FDG410NZ
Description
MOSFET N-CH SINGLE 20V SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDG410NZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 2.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
7.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
535pF @ 10V
Power - Max
380mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDG410NZ
Single N-Channel PowerTrench
20 V, 2.2 A, 70 mΩ
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
θJA
θJA
, T
Max r
Max r
Max r
Max r
HBM ESD protection level > 2 kV (Note 3)
High performance trench technology for extremely low r
High power and current handling capability
Fast switching speed
Low gate charge
RoHS Compliant
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
.41
= 70 mΩ at V
= 77 mΩ at V
= 87 mΩ at V
= 115 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
D
GS
GS
GS
GS
D
SC70-6
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 1.5 V, I
FDG410NZ
-Continuous
-Pulsed
Device
S
D
D
D
D
D
= 2.2 A
= 2.0 A
= 1.8 A
= 1.5 A
T
D
A
= 25 °C unless otherwise noted
G
Parameter
Package
DS(on)
SC70-6
®
MOSFET
1
T
T
T
A
A
A
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized use in small switching regulaters, providing an
extremely low r
Applications
= 25 °C
= 25 °C
= 25 °C
DC/DC converter
Power management
Load switch
D
D
G
Reel Size
1
3
7 ”
2
DS(on)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
and gate charge (Q
Tape Width
8 mm
-55 to +150
Ratings
0.42
0.38
300
333
2.2
6.0
20
±8
6
5
4
g
) in a small package.
D
S
D
www.fairchildsemi.com
March 2009
3000 units
Quantity
Units
°C/W
°C
W
V
V
A

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FDG410NZ Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device .41 FDG410NZ ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B ® MOSFET General Description This N-Channel MOSFET has been designed specifically improve the overall efficiency of DC/DC converters using either = 2.0 A synchronous or conventional switching PWM controllers ...

Page 2

... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev °C unless otherwise noted J Test Conditions = 250 µ ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 125 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev °C unless otherwise noted J 2.5 = 3 1.5 µ s 1.0 0.5 0.6 0.8 1.0 180 160 140 120 100 80 60 ...

Page 4

... MAX RATED 333 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 100 Figure 11. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev °C unless otherwise noted J 1000 100 100 100 Figure 10. ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev °C unless otherwise noted J SINGLE PULSE 333 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...

Page 6

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...

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