FDMC7672S Fairchild Semiconductor, FDMC7672S Datasheet
FDMC7672S
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FDMC7672S Summary of contents
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... Device FDMC7672S FDMC7672S ©2010 Fairchild Semiconductor Corporation FDMC7672S Rev.C3 ® TM SyncFET General Description This FDMC7672S is produced using Fairchild Semiconductor’ advanced Power Trench = 12 tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications DS(on) common in Notebook Computers and Portable Battery packs. ...
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... Reverse Recovery Charge rr Notes determined with the device mounted on a 1in JA the user's board design. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. ° based on starting mH ©2010 Fairchild Semiconductor Corporation FDMC7672S Rev. °C unless otherwise noted J Test Conditions mA mA, referenced to 25 ° ...
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... Figure 3. Normalized On- Resistance vs Junction Temperature 45 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 125 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC7672S Rev. °C unless otherwise noted J PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.6 0 100 125 150 100 0. ...
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... Gate Charge Characteristics 125 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability 2000 1000 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDMC7672S Rev. °C unless otherwise noted J 5000 1000 100 100 100 C J 0.1 0.01 10 100 - ...
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... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMC7672S Rev. °C unless otherwise noted J SINGLE PULSE 125 C RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...
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... Typical Characteristics SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 13 shows the reverses recovery characteristic of the FDMC7672S didt = 300 ...
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... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC7672S Rev.C3 7 www.fairchildsemi.com ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMC7672S Rev.C3 Power-SPM™ ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...