FDMC7664 Fairchild Semiconductor, FDMC7664 Datasheet

MOSFET N-CH 30V 8-MLP

FDMC7664

Manufacturer Part Number
FDMC7664
Description
MOSFET N-CH 30V 8-MLP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC7664

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 18.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
18.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
76nC @ 10V
Input Capacitance (ciss) @ Vds
4865pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.5 mOhms
Forward Transconductance Gfs (max / Min)
115 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
18.8 A
Power Dissipation
2.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC7664
Manufacturer:
FSC
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDMC7664 Rev.C2
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
FDMC7664
N-Channel PowerTrench
30 V, 18.8 A, 4.2 m
Features
D
J
DS
GS
AS
D
, T
JC
JA
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
Symbol
Device Marking
STG
FDMC7664
DS(on)
DS(on)
Top
= 4.2 m at V
= 5.5 m at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
MLP 3.3x3.3
FDMC7664
= 10 V, I
= 4.5 V, I
-Pulsed
-Continuous
-Continuous (Package limited)
Device
D
D
= 18.8 A
Pin 1
= 16.1 A
T
A
®
= 25 °C unless otherwise noted
MOSFET
Parameter
DS(on)
S
S
MLP 3.3x3.3
S
Package
G
Bottom
1
T
T
T
T
C
C
A
A
General Description
This
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
= 25 °C
= 25 °C
= 25 °C
= 25 °C
D
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
D
D
N-Channel
D
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
D
D
D
MOSFET
7
8
5
6
Tape Width
12 mm
is produced using Fairchild
-55 to +150
Ratings
18.8
±20
188
2.3
3.0
30
24
60
42
53
®
process that has
www.fairchildsemi.com
3000 units
4
1
Quantity
3
2
June 2010
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMC7664

FDMC7664 Summary of contents

Page 1

... JC R Thermal Resistance, Junction to Ambient JA Package Marking and Ordering Information Device Marking Device FDMC7664 FDMC7664 ©2010 Fairchild Semiconductor Corporation FDMC7664 Rev.C2 ® MOSFET General Description This N-Channel = 18 Semiconductor’s advanced Power Trench = 16.1 A been especially tailored to minimize the on-state resistance. This ...

Page 2

... Reverse Recovery Charge rr NOTES determined with the device mounted the user's board design. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2 188 mJ is based on starting mH ©2010 Fairchild Semiconductor Corporation FDMC7664 Rev. °C unless otherwise noted J Test Conditions I = 250 250 A, referenced to 25 ° ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On Resistance vs Junction Temperature 60 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC7664 Rev. °C unless otherwise noted 0.9 1 100 125 150 100 0.001 ...

Page 4

... Unclamped Inductive Switching Capability 100 10 1 THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC7664 Rev. °C unless otherwise noted J 7000 1000 100 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. ©2010 Fairchild Semiconductor Corporation FDMC7664 Rev. °C unless otherwise noted J SINGLE PULSE 125 C Note RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 6

... A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILE NAME : MLP08SREVA E. LAND PATTERN RECOMMENDATION IS BASED ON FSC DESIGN ONLY ©2010 Fairchild Semiconductor Corporation FDMC7664 Rev.C2 3. 3.30 0. (0.203) 2.32 2.22 0.785 4 0.350 2 ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMC7664 Rev.C2 Power-SPM ® ® PowerTrench SM PowerXS™ Programmable Active Droop ® QFET e-Series QS Quiet Series RapidConfigure Saving our world, 1mW/W/ time™ ...

Related keywords