FDD8N50NZTM Fairchild Semiconductor, FDD8N50NZTM Datasheet
FDD8N50NZTM
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FDD8N50NZTM Summary of contents
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... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FDD8N50NZ Rev. A Description = 3.25A This N-Channel enhancement mode power field effect transistors D are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...
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Package Marking and Ordering Information Device Marking Device FDD8N50NZ FDD8N50NZ Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT Coefficient J I Zero Gate Voltage Drain Current DSS I Gate ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics 15 10 8.0 V 7.0 V 6.5 V 6 0.1 0.03 0.03 0 Drain-Source Voltage[V] DS Figure 3. On-Resistance Variation ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R ...
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FDD8N50NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDD8N50NZ Rev. A Peak Diode Recovery dv/dt Test ...
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Mechanical Dimensions FDD8N50NZ Rev. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT ™ CTL™ ...