FDP8N50NZ Fairchild Semiconductor, FDP8N50NZ Datasheet

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FDP8N50NZ

Manufacturer Part Number
FDP8N50NZ
Description
MOSFET N-CH 500V TO-220AB-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDP8N50NZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
735pF @ 25V
Power - Max
139W
Mounting Type
Through Hole
Package / Case
TO-220-3 Formed Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP8N50NZ
Manufacturer:
Fairchi/ON
Quantity:
17 385
©2009 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZT Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP8N50NZ / FDPF8N50NZT
N-Channel MOSFET
500V, 8A, 0.85Ω
Features
• R
• Low Gate Charge ( Typ. 14nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.77Ω ( Typ.) @ V
( Typ. 5pF)
G D S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
TO-220
FDP Series
GS
= 10V, I
D
T
= 4A
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted
= 25
G
D
o
S
C)
C
C
= 25
= 100
1
o
C
TO-220F
FDPF Series
o
This N-Channel enhancement mode power field effect transistors
are produced using Fairchild's proprietary, planar stripe, DMOS
technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
Description
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP8N50NZ FDPF8N50NZT
FDP8N50NZ FDPF8N50NZT
0.96
62.5
139
4.8
1.1
G
G
0.5
30
8
-55 to +150
13.9
500
±25
122
300
10
8
62.5
4.8*
3.1
30*
0.4
50
8*
UniFET
D
D
S
S
-
www.fairchildsemi.com
October 2009
switching
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDP8N50NZ Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZT Rev. A Description = 4A This N-Channel enhancement mode power field effect transistors D are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...

Page 2

... R = 25Ω, Starting ≤ 8A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP8N50NZ / FDPF8N50NZT Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250µA, V ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 1200 C iss = oss = oss C rss = C gd 900 C iss 600 300 C rss 0 0 Drain-Source Voltage [V] DS FDP8N50NZ / FDPF8N50NZT Rev. A Figure 2. Transfer Characteristics *Notes: µ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 20V GS o *Note: T ...

Page 4

... DS(on) 0.1 *Notes Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current vs. Case Temperature Case Temperature C FDP8N50NZ / FDPF8N50NZT Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 µ 250 A D 0.0 50 100 150 -100 Figure 10. Maximum Safe Operating Area 50 µ ...

Page 5

... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve - FDP8N50NZ 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. Figure 13. Transient Thermal Response Curve - FDPF8N50NZT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP8N50NZ / FDPF8N50NZT Rev. A (Continued Rectangular Pulse Duration [sec] ...

Page 6

... FDP8N50NZ / FDPF8N50NZT Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP8N50NZ / FDPF8N50NZT Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP8N50NZ / FDPF8N50NZT Rev. A TO-220 8 www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : 4000V FDP8N50NZ / FDPF8N50NZT Rev. A TO-220F Potted 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP8N50NZ / FDPF8N50NZT Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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