FDMS7560S Fairchild Semiconductor, FDMS7560S Datasheet - Page 6

• Manufacturer Part Number: FDMS7560S
• Description: MOSFET N-CH 25V/20V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7560S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.45 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 93nC @ 10V
• Input Capacitance (ciss) @ Vds: 5945pF @ 13V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7560S Rev.C
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7560S.
diode reverse recovery characteristic
Figure 14. FDMS7560S SyncFET body
35
30
25
20
15
10
-5
5
0
0
50
100
TIME (ns)
di/dt = 300 A/ s
150
(continued)
200
250
6
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
-2
-3
-4
-5
-6
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
0
5
V
DS
, REVERSE VOLTAGE (V)
10
T
T
T
J
J
J
= 125
= 100
= 25
o
o
o
C
C
C
15
20
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25