FDMS7650 Fairchild Semiconductor, FDMS7650 Datasheet

MOSFET N-CH 30V POWER56

FDMS7650

Manufacturer Part Number
FDMS7650
Description
MOSFET N-CH 30V POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS7650

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
990 mOhm @ 36A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
209nC @ 10V
Input Capacitance (ciss) @ Vds
14965pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 mOhms
Forward Transconductance Gfs (max / Min)
267 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
104 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7650
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMS7650
Quantity:
25
Company:
Part Number:
FDMS7650
Quantity:
4 500
Company:
Part Number:
FDMS7650
Quantity:
9 000
Part Number:
FDMS7650DC
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMS7650DC
0
©2009 Fairchild Semiconductor Corporation
FDMS7650 Rev.E
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS7650
N-Channel PowerTrench
30 V, 60 A, 0.99 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
, T
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
Symbol
Device Marking
STG
FDMS7650
DS(on)
DS(on)
= 0.99 mΩ at V
= 1.55 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMS7650
-Continuous
-Continuous (Silicon limited)
-Pulsed
= 10 V, I
= 4.5 V, I
Device
Power 56
D
D
G
= 36 A
= 32 A
T
®
C
S
= 25 °C unless otherwise noted
S
MOSFET
Parameter
S
Bottom
Power 56
Package
DS(on)
1
D
Pin 1
T
T
T
T
T
D
C
C
C
A
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge and extremely low r
Applications
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
D
OringFET
Synchronous rectifier
D
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 4)
(Note 3)
D
D
D
D
8
5
6
7
Tape Width
12 mm
-55 to +150
Ratings
±20
232
450
544
104
2.5
1.2
DS(on)
30
60
36
50
.
www.fairchildsemi.com
August 2009
3000 units
Quantity
4
3
2
1
Units
°C/W
G
S
S
S
mJ
°C
W
V
V
A

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FDMS7650 Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS7650 FDMS7650 ©2009 Fairchild Semiconductor Corporation FDMS7650 Rev.E ® MOSFET General Description This N-Channel MOSFET has been designed specifically improve the overall efficiency and to minimize switch node = 32 A ringing of DC/DC converters using either synchronous or D conventional switching PWM controllers ...

Page 2

... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting ° mH N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ©2009 Fairchild Semiconductor Corporation FDMS7650 Rev °C unless otherwise noted J Test Conditions = 250 µ 250 µ ...

Page 3

... T J Figure 3. Normalized On Resistance vs Junction Temperature 200 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 160 120 T = 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMS7650 Rev °C unless otherwise noted J 7 µ 1.5 2 100 125 150 ...

Page 4

... DS(on) 1 SINGLE PULSE T = MAX RATED J 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMS7650 Rev °C unless otherwise noted J 20000 10000 1000 100 120 160 250 200 150 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMS7650 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMS7650 Rev.E 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDMS7650 Rev.E FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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