FCH47N60_F133 Fairchild Semiconductor, FCH47N60_F133 Datasheet

MOSFET N-CH 600V 47A TO-247

FCH47N60_F133

Manufacturer Part Number
FCH47N60_F133
Description
MOSFET N-CH 600V 47A TO-247
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet

Specifications of FCH47N60_F133

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 23.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
47A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
8000pF @ 25V
Power - Max
417W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Quantity
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Part Number:
FCH47N60_F133FCH47N60-F133
Quantity:
2 500
©2009 Fairchild Semiconductor Corporation
FCH47N60_F133 Rev. A.
FCH47N60_F133
Features
• 650V @T
• Typ. Rds(on)=0.058Ω
• Ultra low gate charge (typ. Qg=210nC)
• Low effective output capacitance (typ. Coss.eff=420pF)
• 100% avalanche tested
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
J
= 150°C
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
TO-247
FCH Series
= 25°C)
C
C
= 25°C)
= 100°C)
1
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
TM
is, Fairchild’s proprietary, new generation of high
Typ.
0.24
--
--
FCH47N60
-55 to +150
1800
29.7
± 30
41.7
3.33
600
141
417
300
4.5
47
47
SuperFET
G
Max.
41.7
0.3
--
S
D
February
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FCH47N60_F133 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2009 Fairchild Semiconductor Corporation FCH47N60_F133 Rev. A. Description TM SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize con- duction loss, provide superior switching performance, and with- stand extreme dv/dt rate and higher avalanche energy ...

Page 2

... G J ≤ 47A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FCH47N60_F133 Rev. A. Package Reel Size TO-247 - T = 25°C unless otherwise noted C Conditions 250μ 25° ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 30000 25000 20000 C oss 15000 C iss 10000 C 5000 rss Drain-Source Voltage [V] DS FCH47N60_F133 Rev. A. Figure 2. Transfer Characteristics ※ Notes : 1. 250μ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage 10V 20V ※ Note : ℃ ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 10. Transient Thermal Response Curve - FCH47N60_F133 Rev. A. (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 Notes : ※ 250 μ A 0.5 D 0.0 100 150 200 -100 o C] Figure 10. Maximum Drain Current 50 100 ...

Page 5

... K Ω Ω Unclamped Inductive Switching Test Circuit & Waveforms FCH47N60_F133 Rev. A. Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms www.fairchildsemi.com ( ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms FCH47N60_F133 Rev • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions TO-247AB (FKS PKG CODE 001) FCH47N60_F133 Rev. A. Dimensions in Millimeters 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCH47N60_F133 Rev. A. FPS™ PDP SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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