FCH76N60N Fairchild Semiconductor, FCH76N60N Datasheet

MOSFET N-CH 600V 76A TO-247

FCH76N60N

Manufacturer Part Number
FCH76N60N
Description
MOSFET N-CH 600V 76A TO-247
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet

Specifications of FCH76N60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
76A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
285nC @ 10V
Input Capacitance (ciss) @ Vds
12385pF @ 100V
Power - Max
543W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
28 mOhms
Forward Transconductance Gfs (max / Min)
90 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
76 A
Power Dissipation
543 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number:
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Quantity:
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Part Number:
FCH76N60NF
Quantity:
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©2010 Fairchild Semiconductor Corporation
FCH76N60N Rev. A
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FCH76N60N
N-Channel MOSFET
600V, 76A, 36mΩ
Features
• R
• Ultra Low Gate Charge ( Typ.Q
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
= 28mΩ ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
G
D
GS
S
= 10V, I
g
= 218nC)
D
= 38A
T
C
= 25
TO-247
Parameter
Parameter
-Continuous (T
-Continuous (T
(T
- Derate above 25
- Pulsed
C
o
C unless otherwise noted
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
G
S
D
-55 to +150
Ratings
Ratings
8022
48.1
25.3
5.43
4.34
600
±30
228
100
543
300
0.23
0.24
76
20
40
SupreMOS
www.fairchildsemi.com
May 2010
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FCH76N60N Summary of contents

Page 1

... R Thermal Resistance, Case to Heat Sink (Typical) θCS R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FCH76N60N Rev. A Description = 38A The SupreMOS MOSFET, Fairchild’s next generation of high D voltage super-junction MOSFETs, employs a deep trench filling = 218nC) process that differentiates it from preceding multi-epi based technologies ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 25.3A 25Ω, Starting T = 25° ≤ 76A, di/dt ≤ 200A/μs, V ≤ 380V, Starting Essentially Independent of Operating Temperature Typical Characteristics FCH76N60N Rev. A Package Reel Size TO-247 - unless otherwise noted C Test Conditions I = 250μ 0V, T ...

Page 3

... 1MHz shorted iss oss rss 0.01 0 Drain-Source Voltage [V] DS FCH76N60N Rev. A Figure 2. Transfer Characteristics 500 100 10 *Notes: 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 400 100 = 10V 20V GS o *Note 150 200 250 Figure 6. Gate Charge Characteristics 100 ...

Page 4

... Single Pulse 0. Drain-Source Voltage [V] DS 0.3 0.1 0.5 0.2 0.1 0.05 0.01 0.02 0.01 Single pulse 0.001 -5 10 FCH76N60N Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 250 μ 0.0 100 150 200 Figure 10. Maximum Drain Current ...

Page 5

... FCH76N60N Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FCH76N60N Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FCH76N60N Rev. A TO-247-3L 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCH76N60N Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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