IRFHS9301TRPBF International Rectifier, IRFHS9301TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRFHS9301TRPBF
• Description: MOSFET P-CH 30V 6A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS9301TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 7.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 580pF @ 25V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 13 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 6.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
Fig 16a. Gate Charge Test Circuit
0
Fig 17a. Switching Time Test Circuit
≤ 0.1 %
≤ 1
20K
1K
S
S
DUT
L
-
+
VCC
V
10%
90%
V
GS
DS
Id
Fig 16b. Gate Charge Waveform
Fig 17b. Switching Time Waveforms
Vgs
t
d(on)
t
r
Qgodr
Qgd
t
d(off)
Qgs2
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Vgs(th)
t
f
Vds
Qgs1