STD5N52K3 STMicroelectronics, STD5N52K3 Datasheet - Page 4

• Manufacturer Part Number: STD5N52K3
• Description: MOSFET N-CH 525V 4.4A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STD5N52K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 545pF @ 100V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10957-2

Electrical characteristics
2
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Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4.
Table 5.
1. C
C
V
Symbol
Symbol
R
oss eq.
V
(BR)DSS
increases from 0 to 80% V
C
I
I
C
DS(on)
C
GS(th)
Q
Q
DSS
GSS
Q
R
oss eq.
oss
rss
iss
gs
gd
g
g
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
= 0)
DS
GS
= 0)
Doc ID 16952 Rev 2
V
V
V
f=1 MHz open drain
V
V
(see Figure 19)
I
V
V
V
V
D
DS
GS
DS
DD
GS
GS
GS
DS
DS
DS
= 1 mA, V
= Max rating
= Max rating, T
= 100 V, f = 1 MHz,
= 0
= 0 to 420 V, V
= 10 V
= ± 20 V; V
= V
= 10 V, I
= 420 V, I
Test conditions
Test conditions
GS
, I
GS
D
D
D
= 50 µA
= 2.2 A
= 0
DS
= 4.4 A,
=0
GS
C
=125 °C
= 0
Min.
Min.
525
3
-
-
-
-
Typ.
Typ.
3.75
545
1.2
4.7
45
33
17
10
8
3
oss
when V
Max.
Max.
4.5
1.5
50
10
1
-
-
-
-
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
Ω