STD9NM60N STMicroelectronics, STD9NM60N Datasheet - Page 4

• Manufacturer Part Number: STD9NM60N
• Description: MOSFET N-CH 600V 6.5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD9NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 745 mOhm @ 3.25A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 452pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10959-2

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
I
I
increases from 0 to 80% V
DS(on)
C
GS(th)
C
C
Q
Q
DSS
GSS
Q
R
oss eq.
oss
rss
iss
gs
gd
g
g
= 25 °C unless otherwise specified)
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
catacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
.
= 0)
Doc ID 18063 Rev 1
I
V
V
V
V
V
V
V
V
V
V
(see Figure 18)
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
D
GS
GS
DS
DS
DS
GS
GS
GS
DS
DD
= 1 mA, V
= max rating
= max rating, @125 °C
= ± 20 V
= V
= 10 V, I
= 50 V, f = 1 MHz,
= 0
= 0, V
= 480 V, I
= 10 V,
Test conditions
Test conditions
GS
, I
DS
STD9NM60N, STF9NM60N, STP9NM60N
GS
D
D
= 0 to 480 V
= 250 µA
D
= 3.25 A
= 0
= 6.5 A,
Min.
600
Min.
2
-
-
-
-
Typ.
0.63
Typ.
1.45
17.4
452
9.7
4.8
30
79
3
3
oss
when V
0.745
Max. Unit
Max. Unit
100
100
1
4
-
-
-
-
DS
nC
nC
nC
pF
pF
pF
pF
µA
µA
nA
Ω
V
V
Ω