STD18N55M5 STMicroelectronics, STD18N55M5 Datasheet - Page 3

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STD18N55M5

Manufacturer Part Number
STD18N55M5
Description
MOSFET N-CH 600V 14A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STD18N55M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
 Details
Other names
497-10955-2

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STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I
Table 3.
Symbol
Symbol
R
dv/dt
R
R
I
DM
P
V
thj-case
thj-amb
V
E
thj-pcb
T
I
SD
I
I
TOT
AR
T
T
ISO
GS
AS
stg
D
D
l
j
(2)
(3)
≤ 13 A, di/dt ≤ 400 A/µs, V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Absolute maximum ratings
Thermal data
C
j
= 25°C, I
= 25 °C)
Parameter
Parameter
Peak
D
C
Doc ID 17078 Rev 2
= I
< V
= 25 °C
AR
(BR)DSS
, V
DD
C
C
, V
= 25 °C
= 100 °C
= 50 V)
j
DD
max)
= 400 V.
DPAK D²PAK TO-220 TO-220FP
50
TO-220, DPAK,
D²PAK
1.39
30
8.3
13
52
90
- 55 to 50
Value
300
Value
200
150
25
15
4
62.5
TO-220FP
Electrical ratings
8.3
13
52
2500
25
(1)
(1)
(1)
5
°C/W
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
°C
°C
W
V
A
A
A
A
V
3/22

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