IXTH16N10D2 IXYS, IXTH16N10D2 Datasheet - Page 3

• Manufacturer Part Number: IXTH16N10D2
• Description: MOSFET N-CH 100V 16A TO-247
• Manufacturer: IXYS

Specifications of IXTH16N10D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 64 mOhm @ 8A, 0V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 16A
• Gate Charge (qg) @ Vgs: 225nC @ 5V
• Input Capacitance (ciss) @ Vds: 5700pF @ 25V
• Power - Max: 695W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vds, Max, (v): 100
• Id(on), Min, (a): 16
• Rds(on), Max, (?): 0.064
• Vgs(off), Max, (v): -4.0
• Ciss, Typ, (pf): 5700
• Crss, Typ, (pf): 940
• Qg, Typ, (nc): 225
• Pd, (w): 695
• Rthjc, Max, (ºc/w): 0.18
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2010 IXYS CORPORATION, All Rights Reserved
16
14
12
10
16
14
12
10
30
25
20
15
10
8
6
4
2
0
8
6
4
2
0
5
0
0
0
0
Fig. 1. Output Characteristics @ T
Fig. 3. Output Characteristics @ T
0.05
0.1
10
Fig. 5. Drain Current @ T
0.1
0.2
20
V
V
V
DS
V
DS
DS
GS
0.15
- 0.4V
- 0.8V
V
- 1.2V
- 1.6V
- 2.0V
- 2.4V
- Volts
- Volts
GS
- Volts
= 0V
= 5V
4V
3V
2V
V
0.3
30
GS
= 5V
0.2
4V
3V
J
= 100ºC
J
J
= 25ºC
= 125ºC
40
0.4
0.25
-1V
- 2V
- 3V
1V
0V
- 2V
-1V
1V
2V
0V
0.3
50
0.5
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
240
220
200
180
160
140
120
100
80
60
40
20
30
25
20
15
10
0
5
0
0
-5
0
Fig. 2. Extended Output Characteristics @ T
T
J
Fig. 6. Dynamic Resistance vs. Gate Voltage
= 100ºC
5
10
-4
Fig. 4. Drain Current @ T
10
T
J
= 25ºC
V
20
GS
-3
15
V
= 5V
V
GS
V
V
DS
GS
- 0.4V
- 0.8V
- 1.6V
DS
- 1.2V
- 2.0V
- 2.4V
= 0V
- Volts
- Volts
- Volts
4V
20
30
-2
IXTH16N10D2
3V
IXTT16N10D2
J
= 25ºC
25
2V
∆
V
DS
= 50V - 25V
40
-1
1V
J
30
= 25ºC
0V
-1V
-2V
35
50
0