IXTT16N20D2 IXYS, IXTT16N20D2 Datasheet - Page 5

• Manufacturer Part Number: IXTT16N20D2
• Description: MOSFET N-CH 200V 16A TO-268
• Manufacturer: IXYS

Specifications of IXTT16N20D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 73 mOhm @ 8A, 0V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 16A
• Gate Charge (qg) @ Vgs: 208nC @ 5V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 695W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vds, Max, (v): 200
• Id(on), Min, (a): 16
• Rds(on), Max, (?): 0.073
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 5500
• Crss, Typ, (pf): 607
• Qg, Typ, (nc): 208
• Pd, (w): 695
• Rthjc, Max, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2010 IXYS CORPORATION, All Rights Reserved
100,000
1,000
10,000
1,000
100
1.000
0.300
0.100
0.010
0.001
10
100
1
0.00001
1
0
T
T
Single Pulse
J
C
= 150ºC
R
= 25ºC
f
DS(on)
= 1 MHz
5
Fig. 15. Forward-Bias Safe Operating Area
Limit
10
10
Fig. 13. Capacitance
0.0001
15
@ T
V
DS
V
DS
C
- Volts
20
= 25ºC
- Volts
25
100
Fig. 17. Maximum Transient Thermal Impedance
DC
Fig. 17. Maximum Transient Thermal Impedance
0.001
30
25µs
100µs
1ms
10ms
100ms
C iss
C oss
C rss
35
1,000
Pulse Width - Seconds
40
hvjv
0.01
1,000
100
-1
-2
-3
-4
-5
10
5
4
3
2
1
0
1
0
1
T
T
Single Pulse
V
I
I
J
C
D
G
DS
20
= 150ºC
R
= 75ºC
= 8A
= 10mA
DS(on)
= 100V
Fig. 16. Forward-Bias Safe Operating Area
40
Limit
0.1
60
Fig. 14. Gate Charge
10
80
Q
G
@ T
- NanoCoulombs
V
100
DS
C
- Volts
= 75ºC
120
140
IXTH16N20D2
1
IXTT16N20D2
100
160
DC
25µs
100µs
1ms
10ms
100ms
IXYS REF: T_16N20D2(8C)4-08-10
180
200
1,000
220
10